2017
DOI: 10.1016/j.carbon.2016.11.009
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Self-magnetism induced large magnetoresistance at room temperature region in graphene nanocrystallited carbon film

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Cited by 17 publications
(8 citation statements)
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“…This feature gives our device a huge advantage considering application, because it is much easier to build all electrodes just on the top surface of the film than on the bottom and top of few-atomic-layers of graphene. It also can be seen that the AMR changing ratio decreased as temperature increased from 300 to 400 K. This may be due to the increasing thermal fluctuation in the graphene nano-crystallites, leading to less ordered spin alignment and weaker intrinsic magnetism [22]. Therefore, the magnetic field has less influence in the transport of the carriers.…”
Section: Resultsmentioning
confidence: 99%
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“…This feature gives our device a huge advantage considering application, because it is much easier to build all electrodes just on the top surface of the film than on the bottom and top of few-atomic-layers of graphene. It also can be seen that the AMR changing ratio decreased as temperature increased from 300 to 400 K. This may be due to the increasing thermal fluctuation in the graphene nano-crystallites, leading to less ordered spin alignment and weaker intrinsic magnetism [22]. Therefore, the magnetic field has less influence in the transport of the carriers.…”
Section: Resultsmentioning
confidence: 99%
“…Nano-crystallited carbon film has gained much attention due to its excellent electrical [16,17], magnetic [18,19], and tribological [20,21] properties, especially its magnetoresistance (MR) at room temperature [22]. The novel electrical response of this film under external magnetic field shed light on a new-type of carbon-based magnetic sensing device.…”
Section: Introductionmentioning
confidence: 99%
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“…Edges and defects were considered to generate extra energy states near Fermi‐level and show different behaviors from bulk materials, such as serving as trapping centers in photovaltic processes . The GN edges significantly improves the performance of the GNEC film in terms of electromagnetics, surface friction, and photoelectricity …”
Section: Comparison Of Response Time (Rise Time) Of Our Device and Otmentioning
confidence: 99%
“…Edges and defects were considered to generate extra energy states near Fermi-level [14,15] and show different behaviors from bulk materials, such as serving as trapping centers in photovaltic processes. [15,16] The GN edges significantly improves the performance of the GNEC film in terms of electromagnetics, [17][18][19] surface friction, [20] and photoelectricity. [14,21] In this paper, we fabricated GNEC film/p-Si heterojunction photodiode by growing carbon films on p-silicon with low energy electron irradiation, and tested its photoelectric properties.…”
mentioning
confidence: 99%