Self‐Modulation‐Guided Growth of 2D Tellurides with Ultralow Thermal Conductivity

Abstract

Ultralow thermal conductivity materials have triggered much interest due to diverse applications in thermal insulation, thermal barrier coating, and especially thermoelectrics. Two dimensional (2D) indium tellurides with ultralow thermal conductivity provide a versatile platform for tailoring the heat transfer, exploring new candidates for thermoelectrics, and achieving miniature, lightweight, and highly integrated devices. Unfortunately, their nanostructure and structure‐related heat transfer properties at a 2D scale are much less studied due to difficulties in material fabrication. The ionic character between interlayers and strong covalent bonds in 3D directions impede the anisotropic growth of indium telluride flakes; meanwhile, the low environmental stability and chemical reactivity of tellurium also limit the fabrication of high‐quality tellurides, thus hindering the exploration of thermal transport properties. Here, a self‐modulation‐guided growth strategy to synthesize high‐quality 2D In4Te3 single crystals with ultralow thermal conductivity (0.47 W m−1 K−1) is developed. This strategy can also be extended to synthesize a series of highly crystallized metal tellurides, providing excellent candidates for further application in thermoelectrics.

2D Quasi-Layered Material with Domino Structure

“…1b). A liquid metal was chosen as the growth substrate owing to its inherently at surface, signi cant capacity to accommodate additional elements and well-matched interactions with skewed growth mode [22][23][24][25] . The crystalline attribute, as evidenced by the temperature-dependent X-ray diffraction (XRD) diagram (Supplementary Fig.…”

“…3). Simultaneously, the as-nucleated material induces the precursor atoms dissolved in liquid metal to accumulate on their interface since the layering effect [25][26][27] , further promoting the crystalline process (Supplementary Fig. 4).…”

2D quasi-layered material with domino structure

“…1b). A liquid metal was chosen as the growth substrate owing to its inherently flat surface, significant capacity to accommodate additional elements and wellmatched interactions with skewed growth mode [22][23][24][25] . The crystalline attribute, as evidenced by the temperature-dependent X-ray diffraction (XRD) diagram (Supplementary Fig.…”

“…3). Simultaneously, the as-nucleated material induces the precursor atoms dissolved in liquid metal to accumulate on their interface since the layering effect [25][26][27] , further promoting the crystalline process (Supplementary Fig. 4).…”

Tuning in optoelectronic properties of In/Te bilayer heterostructure upon annealing at different temperatures: surface wettability and photo response study for photonic and solar cell applications

“…10 In this aspect, the binary alloys from the III-VI group forming the chalcogenide semiconductors like Ga 2 Se 3 , In 2 Te 3 , InSe, In 2 S 3 , In 2 Se 3 , and so on have been largely studied for their useful applications as absorber layers in photovoltaic and photodetector applications. 6,11 Indium telluride (In x Te y ) with direct bandgap energy is used in switching devices, pressure transducers, and gas sensors. There are various stable In x Te y phases, like In 2 Te 3 , InTe, In 4 Te 3 , In 3 Te 4 , In 7 Te 10 , and In 9 Te 11, with structural alteration in terms of a and b phase.…”