Self-ordering of quasi-quantum wire in InAlAs/AlGaAs multilayer nanostructure and its optical anisotropy

We have investigated the transport properties of electron gas in a GaAs/(GaAs)4(AlAs)2 quantum well with a regularly corrugated upper interface formed on (775)B-oriented GaAs substrates by molecular beam epitaxy (MBE). The electron mobility perpendicular to the corrugation (µ⊥) was suppressed to 1/70th of that parallel to the corrugation (µ∥) for a quantum well with a well width of L w=5 nm at a temperature of 10 K, and µ⊥ with a thin L w of 5 nm monotonically increased with increasing temperature (10–300 K). These results suggest that the lateral potential induced by the thickness modulation is so strong in the nominally 5-nm-thick quantum well that the electron gas has a quasi-one-dimensional nature.

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Large Anisotropy of Electron Mobilities in Laterally Modulated Two-Dimensional Systems Grown on the (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy

Ohno

Kitada

Shimomura

et al. 2001

Jpn. J. Appl. Phys.

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Self-ordering of quasi-quantum wire in InAlAs/AlGaAs multilayer nanostructure and its optical anisotropy

Cited by 1 publication

References 23 publications

Large Anisotropy of Electron Mobilities in Laterally Modulated Two-Dimensional Systems Grown on the (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy

Large Anisotropy of Electron Mobilities in Laterally Modulated Two-Dimensional Systems Grown on the (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy

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