Self-organization of polarization-dependent periodic nanostructures embedded in III–V semiconductor materials

Shimotsuma, Yasuhiko; Sei, Tomoaki; Mori, Masahiro; Sakakura, Masaaki; Miura, Kiyotaka

doi:10.1007/s00339-016-9686-6

Cited by 13 publications

(8 citation statements)

References 23 publications

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“…[ 17 ] and Shimotsuma et al. [ 203 ] in which local modifications in the bulk of semiconductors have been achieved for the first time with femtosecond pulse trains. Employing a Cr:forsterite amplified femtosecond laser system operating at 1.24‐µm wavelength with 110‐fs pulse duration, the authors first confirmed that it is impossible to induce any structural changes inside silicon with repeated single‐pulse irradiations [ 13,77 ] despite high‐energy pulses (600 µJ) and a large numerical aperture (

NA = 0.85

) for focusing.…”

Section: Solutions For Laser Direct Writing In Siliconmentioning

confidence: 99%

“…found that the generation of nanogratings was only possible for silicon and gallium phosphide (GaP) which are indirect band‐gap materials. [ 203 ] In the case of gallium arsenide (GaAs), gallium nitride (GaN), and zinc oxide (ZnO) which are direct band‐gap materials, no nanogratings could be observed. The origin of the formation is far from being elucidated, but this dependency on the band gap led the authors to suggest an interpretation based on an electrostrictive force through the plasma–phonon interaction.…”

Section: Solutions For Laser Direct Writing In Siliconmentioning

confidence: 99%

“…On the technological side, material analyses show that the strained‐silicon nanostrutures exhibit electrical and thermal conductivity that may offer possibilities for the fabrication of thermoelectric devices. [ 203 ]…”

Section: Solutions For Laser Direct Writing In Siliconmentioning

confidence: 99%

“…However a major difference with ref. [203] is that none of the pulse sequences with individual pulse duration of

\approx

180 fs was successful in achieving permanent modifications inside silicon. The difference has been recently attributed to the sensitivity to the temporal contrast of the pulses that are not identical due to different laser technologies used in these two studies.…”

Section: Solutions For Laser Direct Writing In Siliconmentioning

confidence: 99%

See 3 more Smart Citations

In‐Volume Laser Direct Writing of Silicon—Challenges and Opportunities

Chambonneau

Grojo

Tokel

et al. 2021

Laser & Photonics Reviews

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Laser direct writing is a widely employed technique for 3D, contactless, and fast functionalization of dielectrics. Its success mainly originates from the utilization of ultrashort laser pulses, offering an incomparable degree of control on the produced material modifications. However, challenges remain for devising an equivalent technique in crystalline silicon which is the backbone material of the semiconductor industry. The physical mechanisms inhibiting sufficient energy deposition inside silicon with femtosecond laser pulses are reviewed in this article as well as the strategies established so far for bypassing these limitations. These solutions consisting of employing longer pulses (in the picosecond and nanosecond regime), femtosecond‐pulse trains, and surface‐seeded bulk modifications have allowed addressing numerous applications.

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NA = 0.85

) for focusing.…”

Section: Solutions For Laser Direct Writing In Siliconmentioning

confidence: 99%

Section: Solutions For Laser Direct Writing In Siliconmentioning

confidence: 99%

Section: Solutions For Laser Direct Writing In Siliconmentioning

confidence: 99%

“…However a major difference with ref. [203] is that none of the pulse sequences with individual pulse duration of

\approx

Section: Solutions For Laser Direct Writing In Siliconmentioning

confidence: 99%

See 2 more Smart Citations

In‐Volume Laser Direct Writing of Silicon—Challenges and Opportunities

Chambonneau

Grojo

Tokel

et al. 2021

Laser & Photonics Reviews

View full text Add to dashboard Cite

show abstract

“…In the last few years the focus has been shifted towards the next level fine material processing -in particular sub-surface modification of the crystalline silicon using ultra-short pulsed lasers (pico-and femtosecond) at the wavelengths above 1100 nm, where silicon becomes transparent. Several successful studies have been carried out since then [10][11][12][13][14][15][16][17][18][19][20]. Those sub-surface defects are targeted for such important industrial processes as thin wafer exfoliation [21], sub-surface structuring [17,21], data storage [22], waveguides [4,[22][23][24] and grating fabrication [6].…”

Section: Introduction and State Of The Artmentioning

confidence: 99%

Nonlinearity and wavelength control in ultrashort-pulse subsurface material processing

Richter¹,

Калашников²,

Sorokina³

2022

Preprint

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The pronounced dependence of the nonlinear parameters of both dielectric and semiconductor materials on the wavelength, and the nonlinear interaction between the ultra-short laser pulse and the material requires precise control of the wavelength of the pulse, in addition to the precise control of the pulse energy, pulse duration and focusing optics. This becomes particularly important for fine sub-wavelength single pulse sub-surface processing. Based on two different numerical models and taking Si as example material, we investigate the spatio-temporal behavior of a pulse propagating through the material while covering a broad range of parameters. The wavelength-dependence of material processing depends on the different contributions of two-and tree-photon absorption in combination with the Kerr effect which results in a particularly sharp nonlinear peak at ≈ 2100 nm. We could show that in silicon this makes processing preferable close to this wavelength. The impact of the nonlinear nonparaxial propagation effects on spatio-temporal beam structure is also investigated. It could be shown that with increasing wavelength and large focusing angles the aberrations at the focal spot can be reduced, and thereby cleaner and more precise processing can be achieved. Finally, we could show that the optimum energy transfer from the pulse to the material is within a narrow window of pulse durations between 600 to 900 fs.

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Internal Structuring of Semiconductors with Ultrafast Lasers: Opening a Route to Three-Dimensional Silicon Photonics

Grojo

Chambonneau²,

Lei³

et al. 2023

Springer Series in Optical Sciences

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Important challenges remain to achieve reliable three-dimensional laser writing inside semiconductors as important as silicon. Experiments show that nonlinear energy deposition with long infrared laser pulses can modify silicon internally. However, the level of controllability is extremely limited compared with the femtosecond laser nanostructuring regimes reported in transparent dielectrics. Recent efforts have concentrated on the specificities of the bulk silicon response to tightlyfocused ultrashort pulses. The strong propagation nonlinearities inherent to narrow band-gap semiconductors limit the space-time laser energy localization and prevent in most cases material breakdown with the shortest pulses. This Chapter proposes an overview of this emerging topic and the practical solutions to this problem. It also discusses the potential of three-dimensional laser nanostructuring in narrow band-gap semiconductors to address applications in different fields. Among them, the first demonstrations of refractive index laser engineering in silicon open the perspective to move silicon photonics from two-dimensional systems to monolithic

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Self-organization of polarization-dependent periodic nanostructures embedded in III–V semiconductor materials

Cited by 13 publications

References 23 publications

In‐Volume Laser Direct Writing of Silicon—Challenges and Opportunities

In‐Volume Laser Direct Writing of Silicon—Challenges and Opportunities

Nonlinearity and wavelength control in ultrashort-pulse subsurface material processing

Internal Structuring of Semiconductors with Ultrafast Lasers: Opening a Route to Three-Dimensional Silicon Photonics

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