2009
DOI: 10.1016/j.mssp.2009.07.012
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Self-organizational tendencies of heteroepitaxial transition-metal silicide nanoislands

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Cited by 7 publications
(1 citation statement)
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“…The silicide, as a reaction product, might be grown epitaxially on the Si substrate if the misfit is low enough. Numerous examples of silicide layers are known, which can be grown epitaxially on silicon substrates [10]. Generally, the deposited metal film structure and the solid phase reaction affect the quality of the silicide epitaxial growth.…”
Section: Introductionmentioning
confidence: 99%
“…The silicide, as a reaction product, might be grown epitaxially on the Si substrate if the misfit is low enough. Numerous examples of silicide layers are known, which can be grown epitaxially on silicon substrates [10]. Generally, the deposited metal film structure and the solid phase reaction affect the quality of the silicide epitaxial growth.…”
Section: Introductionmentioning
confidence: 99%