Self-Organized Al Nanotip Electrodes for Achieving Ultralow-Power and Error-Free Memory

Retamal, José Ramón Durán; Ho, Chin-Hsiang; Tsai, Kun-Tong; Ke, Jr‐Jian; He, Jr‐Hau

doi:10.1109/ted.2018.2888873

Cited by 26 publications

(19 citation statements)

References 32 publications

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“…The phenomena that occur at the metal/metal–oxide interface and their role in resistive switching have been discussed by several authors. These include the thermodynamics of the switching process, determined by Gibbs free energy, mobility of oxygen vacancies, and formation of conductive filaments . The filament‐based conduction mechanism was first suggested by Dearnaley et al who also mentioned that the forming voltage is directly proportional to the free energy of oxide formation .…”

Section: Resultsmentioning

confidence: 99%

“…The filament‐based conduction mechanism was first suggested by Dearnaley et al who also mentioned that the forming voltage is directly proportional to the free energy of oxide formation . There is evidence in the literature to show that these oxygen vacancies are the mobile species that are crucial for switching from HRS to LRS, i.e., the SET process . During the transition from LRS to HRS, i.e., the RESET process, one or more of the following phenomena can occur: the vacancies can move toward electrodes leaving a narrower filament or move from the filament into the resistive bulk oxide or recombine with O interstitials.…”

Section: Resultsmentioning

confidence: 99%

“…The top electrode metals Ni, Cr, and Al are selected from the Ellingham diagrams in the order of increasing oxygen affinity . All the three metals are widely used in RRAM devices as electrodes and interfacial layers lead to the improvement in switching parameters . In terms of oxygen affinity, Ni and Cr are low and medium oxygen affinity metals, respectively.…”

Section: Introductionmentioning

confidence: 99%

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Oxygen Affinity of Metal Electrodes as Control Parameter in Tuning the Performance of Cu_xO‐Based Resistive Random Access Memory Devices

Sangani

Krishna

2019

Physica Status Solidi (a)

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Cu x O-based resistive random access memory (RRAM) devices are fabricated with low, medium, and high oxygen affinity metals as the top electrode and gold and platinum as the bottom electrode. Switching performance of the device with varying oxygen affinity is observed. The variation, mean, and the cycle percentage of V set and V reset values decrease with the decrease in oxygen affinity but increase in the case of I reset . The reset power parameter decreases with oxygen affinity of metal electrodes (OAME). A generalized figure of merit (FM), which considers all the parameters (variation, mean, and cycles count) of a switching parameter (V set , V reset , I reset , and P reset ), is introduced to explain the performance. The FM also confirms the variation in switching parameters with oxygen affinity. This reveals that the performance of the device is improved with the decrease in oxygen affinity. The device fabricated with low oxygen affinity metal electrode, Ni, shows the best performance among all the Cu x O-based RRAM devices. Further improvement in device performance is achieved by changing the bottom electrode from Au to Pt with the top electrode being retained as a low oxygen affinity metal. This combination is shown to be the best in terms of retention and endurance.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Oxygen Affinity of Metal Electrodes as Control Parameter in Tuning the Performance of Cu_xO‐Based Resistive Random Access Memory Devices

Sangani

Krishna

2019

Physica Status Solidi (a)

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“…As we all know, it is a well validated fact that the surface nanostructures of the material have a significant effect on its surface properties . Particularly, one‐dimension nanostructure (such as nanowire, nanorod and nanobelt) show a unique surface property, which can been extensively applied in optoelectronic and electronic systems . Furthermore, these properties can highly affect the charge stability of the electrets .…”

Section: Figurementioning

confidence: 99%

Charge Distribution and Stability of SiO₂ Nanoarray Electret

Liang

Wang

et al. 2020

ChemNanoMat

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The devices based on SiO 2 electret have significant applications in various MEMS sensors. However, the charge stability of SiO 2 electret suffered from the water percolation, which seriously restricts its application. In this work, the longterm charge stability of the SiO 2 nanoarray electret (SiO 2 NAE) without any water repellent treatment is demonstrated. When the oxidation time is 1.5 h, the potential decay of the SiO 2 NAE is less than 46% during 60 days with an original potential of À 120 V. The long-term charge stability of the SiO 2 NAE is attributed to its unique charge decay process and the large H 2 O diffusion barrier in the SiO 2 NAE: firstly, the charge trapped in the planar part of the SiO 2 NAE decays rapidly. Then, residual charge stored in the SiO 2 nanoarray. Eventually, the large H 2 O diffusion barrier in the interface of Si/SiO 2 effectively hinders the charge decay. In addition, we demonstrate the unique charge stability of nanoelectret, which has a promising application in developing high performance electret-based devices.An electret is a kind of insulator that exhibits a quasi-permanent source of electric field. Due to the trapped electret charges, it has been widely used in MEMS devices such as energy harvester, [1][2] various transducer [3][4][5] and microphones. [6] Among all the electret materials, SiO 2 show the great potential in fabricating high performance MEMS devices because of the high dielectric strength and the compatibility in CMOS processing. However, the trapped Communication

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“…Soft lithography has been extensively investigated to form nanostructures by using moldable elastomers . This fabrication process is typically based on self‐assembled periodic monolayers of nano‐ or microsized spherical particles . However, the structures developed using this method are monoperiodic with the periodicity limited by the diameter of the sphere.…”

Section: Introductionmentioning

confidence: 99%

Shaping Resonant Light Confinement and Optoelectronic Spectra Using Strain in Hierarchical Multiscale Structures

Jagdish

Panidhara

Satyanarayana

et al. 2019

Advanced Optical Materials

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Hierarchically structured optical materials have been a topic of intriguing research interest due to the possibility of tailoring material properties beyond the limits of bulk continuum material design. Here, an optical confinement phenomenon in a hierarchically structured waveguide platform consisting of alternating clusters of nanostructured and planar microscale domains is demonstrated. An unconventional self‐assembly‐based strain‐assisted nanomolding process is developed to fabricate these hierarchically structured multiperiodic waveguides. Further, these hierarchically patterned waveguides are used as substrates for solution‐processed photodetectors. The optical confinement occurring due to the nanoscale scattering and the wavelength‐dependent interaction between the planar and structured microdomains leads to an improved uniformity in the optoelectronic spectral response of these photodetectors. Furthermore, by tuning the multiperiodicity within the nanostructured domain structure, using a mechanical strain of 20%, an improvement of around 10% in the uniformity of the optoelectronic spectral response of the photodetectors is demonstrated. Simulations further show that these processes arise only in the presence of a hierarchical structure, due to multiscale interaction, through wavelength‐selective coupling of scattered light from nanostructured domains to the planar microdomains. In summary, hierarchical structures can address optoelectronic problems that cannot be addressed by simpler structures.

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Self-Organized Al Nanotip Electrodes for Achieving Ultralow-Power and Error-Free Memory

Cited by 26 publications

References 32 publications

Oxygen Affinity of Metal Electrodes as Control Parameter in Tuning the Performance of Cu_xO‐Based Resistive Random Access Memory Devices

Oxygen Affinity of Metal Electrodes as Control Parameter in Tuning the Performance of Cu_xO‐Based Resistive Random Access Memory Devices

Charge Distribution and Stability of SiO₂ Nanoarray Electret

Shaping Resonant Light Confinement and Optoelectronic Spectra Using Strain in Hierarchical Multiscale Structures

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Self-Organized Al Nanotip Electrodes for Achieving Ultralow-Power and Error-Free Memory

Cited by 26 publications

References 32 publications

Oxygen Affinity of Metal Electrodes as Control Parameter in Tuning the Performance of CuxO‐Based Resistive Random Access Memory Devices

Oxygen Affinity of Metal Electrodes as Control Parameter in Tuning the Performance of CuxO‐Based Resistive Random Access Memory Devices

Charge Distribution and Stability of SiO2 Nanoarray Electret

Shaping Resonant Light Confinement and Optoelectronic Spectra Using Strain in Hierarchical Multiscale Structures

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Product

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Oxygen Affinity of Metal Electrodes as Control Parameter in Tuning the Performance of Cu_xO‐Based Resistive Random Access Memory Devices

Oxygen Affinity of Metal Electrodes as Control Parameter in Tuning the Performance of Cu_xO‐Based Resistive Random Access Memory Devices

Charge Distribution and Stability of SiO₂ Nanoarray Electret