Self‐organized growth of catalyst‐free GaN nano‐ and micro‐rods on Si(111) substrates by MOCVD

Foltynski, Bartosz; Giesen, C.; Heuken, M.

doi:10.1002/pssb.201451508

Cited by 6 publications

(6 citation statements)

References 17 publications

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“…A standard example of an antisurfactant used in epitaxy is silicon in MOCVD growth of group‐III nitride nanostructures. [ 35 ] It has been widely studied that Si presence during the process leads to a transition from 2D to 3D growth, enabling the growth of (Al, Ga, and In) N quantum dots, [ 36–38 ] nanowires, [ 39–41 ] and microrods. [ 42,43 ]…”

Section: Introductionmentioning

confidence: 99%

“…A standard example of an antisurfactant used in epitaxy is silicon in MOCVD growth of group-III nitride nanostructures. [35] It has been widely studied that Si presence during the process leads to a transition from 2D to 3D growth, enabling the growth of (Al, Ga, and In) N quantum dots, [36][37][38] nanowires, [39][40][41] and microrods. [42,43] Regardless of the growth method, wurtzite nanowires and microrods exhibit a hexagonal shape with smooth m-plane sidewall facets or, rarely, a triangular shape.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Arsenic‐Induced Growth of Dodecagonal GaN Microrods with Stable a‐Plane Walls

Ciechanowicz

Gorantla

Michałowski

et al. 2020

Advanced Optical Materials

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Nano‐ and micro‐rods of GaN offer many functionalities that are not present in regular flat nanostructures. Therefore, development of new growth methods of such structures is a hot topic. In this work the arsenic‐induced growth of GaN microrods under Ga‐rich conditions in the molecular beam epitaxy is presented. It is a self‐catalyst vapor–liquid–solid process with native Ga droplets. The formation of Ga droplets is induced by antisurfactant properties of arsenic. The presence of As during the epitaxial process promotes the growth of dodecagonal microrods with 12 walls: six m‐planes and six a‐planes. It is possible since As changes the growth rates for the different GaN planes comparing to arsenic‐free conditions, where hexagonal microrods are usually formed. The growth parameters and their influence on the sample morphology are carefully studied in this work. Microrods with an average height and diameter of 3 and 0.7 µm, respectively, and the density of 2.3 × 107 cm−2, are obtained under optimal growth conditions. The observed mechanism of growth of microrods can also be present in other material systems by introducing atoms with antisurfactant properties under metal‐rich conditions, where the surface is covered by a metal monolayer.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Arsenic‐Induced Growth of Dodecagonal GaN Microrods with Stable a‐Plane Walls

Ciechanowicz

Gorantla

Michałowski

et al. 2020

Advanced Optical Materials

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show abstract

“…The coarsening of these clusters results in the nanorod's nuclei formation and kinetics determine the elongation and final nanorod growth. [43,56] The general rule is that nanorods grow in the direction of minimizing the total surface energy of the crystal. [57] III-nitride nanorods usually grow preferentially along c-axis, since the average surface energies of the polar and semipolar planes are higher than those of nonpolar planes.…”

Section: Catalyst-assisted Growthmentioning

confidence: 99%

Self-Assembled and Selective-Area Growth of Group III-Nitride Semiconductor Nanorods by Magnetron Sputter Epitaxy

Serban¹

2018

Linköping Studies in Science and Technology. Dissertations

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“…The coarsening of these clusters results in the nanorods nuclei formation and kinetics determine the elongation and final nanorod growth. [35,47] The general rule is that nanorods grow in the direction of minimizing the total surface energy of the crystal. [48] III-nitride nanorods, usually grow preferentially along c-axis, since the average surface energies of the polar and semipolar planes are higher than those of nonpolar planes.…”

Section: Catalyst-assisted Growthmentioning

confidence: 99%

Magnetron Sputter Epitaxy of Group III-Nitride Semiconductor Nanorods

Serban¹

2017

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The III-nitride semiconductors family includes gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), and related ternary and quaternary alloys. The research interest on this group of materials is sparked by the direct bandgaps, and excellent physical and chemical properties. Moreover, the ternary alloys (InGaN, InAlN and AlGaN) present the advantage of bandgap tuning, giving access to the whole visible spectrum, from near infrared into deep ultraviolet wavelengths. The intrinsic properties of III-nitride materials can be combined with characteristical features of nanodimension and geometry in nanorod structures. Moreover, nanorods offer the advantage of avoiding problems arising from the lack of native substrates, like lattice and thermal expansion, film -substrate mismatch.The growth and characterization of group III-nitride semiconductos nanorods, namely InAlN and GaN nanorods, is presented in this thesis. All the nanostructures were grown by employing direct-current reactive magnetron sputter epitaxy. InxAl1−xN self-assembled, core-shell nanorods on Si (111) substrates were demonstrated. A comprehensive study of temperature effect upon the morphology and composition of the nanorods was realized. The radial nanorod heterostructure consists of In-rich cores surrounded by Al-rich shells with different thicknesses. The spontaneous formation of core-shell nanorods is suggested to originate from phase separation due to spinodal decomposition. As the growth temperature increase, In desorption is favored, resulting in thicker Al-rich shells and larger nanorod diameters.Both self-assembled and selective-area grown GaN nanorods are presented.

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Self‐organized growth of catalyst‐free GaN nano‐ and micro‐rods on Si(111) substrates by MOCVD

Cited by 6 publications

References 17 publications

Arsenic‐Induced Growth of Dodecagonal GaN Microrods with Stable a‐Plane Walls

Arsenic‐Induced Growth of Dodecagonal GaN Microrods with Stable a‐Plane Walls

Self-Assembled and Selective-Area Growth of Group III-Nitride Semiconductor Nanorods by Magnetron Sputter Epitaxy

Magnetron Sputter Epitaxy of Group III-Nitride Semiconductor Nanorods

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