Self-Organized Growth of Ge Nanowires from Ni−Cu Bulk Alloys

Kang, Kibum; Gu, Gang Hee; Kim, Dong An; Park, Chan Gyung; Jo, Moon‐Ho

doi:10.1021/cm802184a

Cited by 26 publications

(26 citation statements)

References 19 publications

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“…This bimodal distribution of nanowire diameters is in accordance with studies reported for the growth of Ge nanowires from Cu/Ni films [20]. Similar to the Ni nanocrystal-seeded Ge nanowires, the 1D nanostructures grown from Ni/Fe films were highly crystalline as shown in figure 4(b); however the composition in the smaller and larger seeds differed from each other as determined by EDX analysis.…”

supporting

confidence: 89%

Diameter-Controlled Solid-Phase Seeding of Germanium Nanowires: Structural Characterization and Electrical Transport Properties

et al. 2011

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supporting

confidence: 89%

Diameter-Controlled Solid-Phase Seeding of Germanium Nanowires: Structural Characterization and Electrical Transport Properties

et al. 2011

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“…This classification works less well for III-Vs as at least two elements of which the semiconductor wire is composed should be considered. Among the catalyst metals other than Au investigated for either VSS or VLS growth of group IV nanowires are Al [28,96], Pd [97], Cu [98e101], Ti [102,103], Mn [104,105], Ni [106,107] In Refs. [108,109], Ga [110], Sn [111], and Bi [112].…”

Section: Catalyst Selectionmentioning

confidence: 99%

Semiconductor nanowires: to grow or not to grow?

McIntyre

Morral

2020

Materials Today Nano

125

122

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Semiconductor nanowires have demonstrated exciting properties for nanophotonics, sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic devices. Fabrication schemes for nanowires are varied, but they fall into three general categories: (1) top-down lithographic patterning and etching of bulk crystals and epitaxial films; (2) bottom-up, locally catalyzed crystal growth of nanowires; and (3) hybrid methods that combine aspects of categories (1) and (2). In this article, we examine the relative merits and unique attributes of each of these paradigms for nanowire synthesis. We review literature relevant to nanowire fabrication methods, faceting and dimensional control (diameter and length), positioning and alignment, doping, bulk and surface defects, and formation of unique nanowire heterostructures and metastable phases. Finally, we describe the factors governing selection among top-down, bottom-up, and hybrid methods to fabricate nanowire structures depending on their desired structural features and applications.

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“…Finally, self-seeded methods often employ films 112 or foils 119 to seed nanowire growth and these are often composed of materials other than Au. The authors report the formation of a bi-modal diameter distribution for nanowires grown from Ni-Cu bulk alloys 112 , which is a disadvantage if uniform diameter distributions are required. Self-seeded growth is a relatively new method and still needs to be investigated further to gain a more complete understanding.…”

Section: Comparisons Of the Various Growth Methodsmentioning

confidence: 99%

“…Specifically, the Ge from the source material decomposed into the Cu of the Ni-Cu films which formed Cu3Ge nanoscrystals 112 . Ge then precipitated out of these nanocrystals, forming Ge nanowires.…”

Section: Seedless and Self-seeded Nanowire Growthmentioning

confidence: 99%