Self-organized InAs islands on (100) InP by metalorganic vapor-phase epitaxy

Taskinen, M.-R.; Sopanen, Markku; Lipsanen, Harri; Tulkki, Jukka; Tuomi, T.; Ahopelto, Jouni

doi:10.1016/s0039-6028(96)01597-x

Cited by 70 publications

(28 citation statements)

References 19 publications

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“…b Width distribution; width is measured at the base of the wire. Mean width=240 Å, standard deviation=30 Å Studies of the growth of self-assembled nanostructures, including InAs growth on InP(001) surface [22][23][24] generally report the formation of quantum dots. This outlines the unique feature of our experimental results, which is the formation of self-organized nanowires.…”

mentioning

confidence: 99%

Strain-induced formation of self-assembled nanostructures in the epitaxial growth of InAs and GaAs on InP(001)

Robach¹,

Phaner²,

Solère³

et al. 1998

Applied Physics A: Materials Science & Processing

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The evolution of surface morphology in epitaxial InAs and GaAs strained layers grown on InP(001) was investigated by scanning tunneling microscopy. For compressive InAs layers, well-defined nanowires were formed at the onset of the 2D/3D growth mode transition. These wires have base width and height distributions peaked at around 230 Å and 20 Å, respectively. The sharp 2D/3D transition is associated with a large reorganization of matter. In contrast, for tensile GaAs layers the growth mode is characterized by a gradual roughening process.There is increasing interest in the formation of low-dimensional semiconductor structures, such as quantum dots or wires, which, due to quantum confinement effects, exhibit novel physical properties leading to important applications in optoelectronics. One of the promising paths towards the formation of such nanostructures is to exploit spontaneous self-organization phenomena in the early stages of the heteroepitaxial growth of strained semiconductor layers. For a relatively high intrinsic strain, the growth evolves beyond a critical thickness from an initial layer-by-layer growth mode to the formation of coherent 3D islands (Stranski-Krastanov growth mode). This strain-induced self-assembling method has been applied to a wide range of III-V heterostructures, such as In 1−x Ga x As/GaAs [1][2][3][4] or InP/GaAs [5,6]. Quantum dots which exhibit ordering in size, shape and lateral arrangement have been successfully produced by both the metalorganic vapor-phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) growth methods, and their optical properties have been largely characterized [7,8]. Although it was suggested by Tersoff et al.[9] that quantum wires might even be formed in that way, most studies of quantum wire formation have concentrated on the controlled epitaxial growth on patterned or vicinal surfaces [10][11][12]. For optoelectronic applications significant progress must still be achieved to control the size distribution of these 3D nanostructures. Therefore, * Corresponding author a good understanding of the physical processes that govern the strain-induced 3D islanding remains a real challenge.The In 1−x Ga x As/InP system offers a particularly interesting situation because it allows us to study the epitaxial growth of either compressively strained (x < 0.47) or tensilely strained (x > 0.47) layers. In that system the maximum attainable strain corresponds to compressively strained InAs/InP(001) layers (ε = −3.1%) and tensilely strained GaAs/InP(001) layers (ε = 3.7%). We study here the initial stages of growth for these two extreme cases, using scanning tunneling microscopy (STM) to characterize the growing crystal surface. The formation, in the compression case, of well-ordered nanowires at the onset of the 2D/3D growth mode transition will be more particularly described.Epitaxial layers were grown by molecular beam epitaxy in a RIBER 2300 system connected under ultrahigh vacuum to an STM chamber equipped with a beetle-type scanning tunneling microscope [13]. After t...

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mentioning

confidence: 99%

Strain-induced formation of self-assembled nanostructures in the epitaxial growth of InAs and GaAs on InP(001)

Robach¹,

Phaner²,

Solère³

et al. 1998

Applied Physics A: Materials Science & Processing

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“…In this growth mode a wetting layer and coherently strained three-dimensional islands are formed during the growth process. The research has been concentrated on compressively strained material systems such as Ge/ Si, 1 InAs/ InP, 2 InP / GaInP, 3 InGaAs/ GaAs, 4 InP / GaAs, 5 and GaInNAs/ GaAs. 6 Also tensile threedimensional islands have been fabricated from, e.g., PbSe on PbTe.…”

Section: Tensile-strained Gaasn Quantum Dots On Inpmentioning

confidence: 99%

Tensile-strained GaAsN quantum dots on InP

Pohjola¹,

Hakkarainen²,

Koskenvaara³

et al. 2007

Applied Physics Letters

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“…[10][11][12][13][14][15][16] The InAs/InP SAQD, reported in this paper, is a promising candidate for optoelectronic devices covering 1.3-1.55 µm range. [17][18][19] However, the detailed information on SAQD formation kinetics during GI and on the temperature dependence of PL in this quantum dot system is still lacking. The kinetics of SAQD evolution in the InAs/InP system might be quite different from that of SAQD systems with the same group V interface such as In(Ga)As/GaAs, due to the As/P exchange reaction.…”

Section: Effects Of Growth Interruption On the Evolution Of Inas/inp mentioning

confidence: 99%

Effects of growth interruption on the evolution of InAs/InP self-assembled quantum dots

Yoon

Moon

Lee

et al. 2000

Journal of Elec Materi

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Self-organized InAs islands on (100) InP by metalorganic vapor-phase epitaxy

Cited by 70 publications

References 19 publications

Strain-induced formation of self-assembled nanostructures in the epitaxial growth of InAs and GaAs on InP(001)

Strain-induced formation of self-assembled nanostructures in the epitaxial growth of InAs and GaAs on InP(001)

Tensile-strained GaAsN quantum dots on InP

Effects of growth interruption on the evolution of InAs/InP self-assembled quantum dots

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