Self-organized porous-alumina implantation masks for generating nanoscale arrays

Highly Ordered Anodic Porous Alumina Formation by Self‐Organized Anodizing

“…The horizontal rate of oxide dissolution is mainly responsible for barrier layer removal, whereas the vertical rate plays a key role in the widening of pores and nanopore thickness reduction. A different etching technique using a reactive ion-beam (mainly Ar + ) was also proposed for removal of the barrier layer in anodic porous alumina [385,524,528]. Most importantly, it should be noted that dry etching by ion-beams requires the use of a sophisticated apparatus.…”

Carbon nanotubes prepared by anodic aluminum oxide template method

“…The third and also the most frequently used method is to employ a wet chemical process, in which the unoxidized aluminum substrate is dissolved by immersing an anodized sample into a saturated solution of HgCl 2 , CuCl 2 , CuSO 4 , CuCl 2 /HCl, etc. [57][58][59][60]. The barrier layer can also be removed to obtain two side open AAO film as shown in Figure 2(c).…”

Nanopatterning by ion implantation through nanoporous alumina masks

“…17,18 Alternatively the well-established process of anodisation of aluminium oxide (AAO), 19,20 exploiting self-organized lateral pore-ordering by strain-equilibration, has been proposed as patterning mask, although initially more successful for sputtering and deposition rather than implantation. [21][22][23][24][25][26][27] In this work we present the first successful pattern transfer through AAO-masked implantation, which is directly documented by high-resolution imaging. A crucial element is the introduction of a novel sandwich technique, attaching an ultra-thin AAO mask onto an electron transparent membrane as a ''substrate''.…”