Self-Patterned Nanoparticle Layers for Vertical Interconnects: Application in Tandem Solar Cells

Abstract

We demonstrate self-patterned insulating nanoparticle layers to define local electrical interconnects in thin-film electronic devices. We show this with thin-film silicon tandem solar cells, where we introduce between the two component cells a solution-processed SiO2 nanoparticle layer with local openings to allow for charge transport. Because of its low refractive index, high transparency, and smooth surface, the SiO2 nanoparticle layer acts as an excellent intermediate reflector allowing for efficient light management.

Flexible Near‐Infrared Photovoltaic Devices Based on Plasmonic Hot‐Electron Injection into Silicon Nanowire Arrays

“…The reduction in Si absorber thickness greatly compromises the light absorption of devices, particularly in the NIR spectral region . To efficiently harvest or trap the light, semiconductor nanostructures (e.g., nanowire arrays), absorber materials with multiple energy bands, and surface plasmonic elements for subwavelength scattering have been designed and used in PV devices. Light harvesting by nanowire arrays and plasmonic scattering, in which multiple reflection increases light traveling path lengths, has been validated for various types of solar cells including p–n junctions, inorganic–organic hybrids, and Schottky‐type devices .…”

“…[6] Ther eduction in Si absorber thickness greatly compromises the light absorption of devices,p articularly in the NIR spectral region. [7,8] To efficiently harvest or trap the light, semiconductor nanostructures (e.g., nanowire arrays), [9,10] absorber materials with multiple energy bands, [11,12] and surface plasmonic elements for subwavelength scattering [8,[13][14][15] have been designed and used in PV devices.L ight harvesting by nanowire arrays and plasmonic scattering,i nw hich multiple reflection increases light traveling path lengths,has been validated for various types of solar cells including p-n junctions, [3,10] inorganic-organic hybrids, [9,[16][17][18] and Schottky-type devices. [19][20][21] According to the established mechanisms,a pparently such light trapping only works for the spectral range where the photons can be effectively absorbed and converted by semiconductor.Asthe use of crystalline Si cannot result in large absorption coefficients and high conversion efficiencies for NIR light, [7] the NIR improvement on Si-based PVs by light-trapping techniques would be limited.Herein, we demonstrate the fabrication of flexible PV cells with the improved NIR efficiency in the NIR region through the implementation of plasmonic hot-electron injection into monocrystalline Si nanowire arrays (Si NWs).…”

Tuning the porosity of zinc oxide electrodes: from dense to nanopillar films

“…This approach is commonly applied in optoelectronic devices [31,32]. Moreover a layer composed of nanoparticles (having a low refractive index) has been successfully applied as an intermediate reflector layer between the top and the bottom cell in tandem solar cells [33,34]. Figure 5 shows that when the a-Si:H is coated with the dense ZnO film, the reflectance of the solar cell decreases from 20 to 6% in the spectral range between 400 and 650 nm.…”

Flexible Near‐Infrared Photovoltaic Devices Based on Plasmonic Hot‐Electron Injection into Silicon Nanowire Arrays

“…As most of the existing PV devices are designed for visible-light utilization, there is astrong demand to develop NIR PV modules through device structure and mechanism innovation. [7,8] To efficiently harvest or trap the light, semiconductor nanostructures (e.g., nanowire arrays), [9,10] absorber materials with multiple energy bands, [11,12] and surface plasmonic elements for subwavelength scattering [8,[13][14][15] have been designed and used in PV devices.L ight harvesting by nanowire arrays and plasmonic scattering,i nw hich multiple reflection increases light traveling path lengths,has been validated for various types of solar cells including p-n junctions, [3,10] inorganic-organic hybrids, [9,[16][17][18] and Schottky-type devices. [1,2] Silicon is the second most abundant element in the earths crust and is awidely utilized material in semiconductor technology with ah igh level of ease in manufacturing.T his nontoxic semiconductor can absorb photons at energies above 1.1 eV, [3,4] providing apossibility for harvesting the NIR light at l < 1100 nm;however, its quantum efficiency for NIR photon conversion is not as high as that for visible light.…”

“…[5] To this end, very thin layers of absorber materials (e.g., ultrathin crystalline Si)a re used in PV cells. [7,8] To efficiently harvest or trap the light, semiconductor nanostructures (e.g., nanowire arrays), [9,10] absorber materials with multiple energy bands, [11,12] and surface plasmonic elements for subwavelength scattering [8,[13][14][15] have been designed and used in PV devices.L ight harvesting by nanowire arrays and plasmonic scattering,i nw hich multiple reflection increases light traveling path lengths,has been validated for various types of solar cells including p-n junctions, [3,10] inorganic-organic hybrids, [9,[16][17][18] and Schottky-type devices. [7,8] To efficiently harvest or trap the light, semiconductor nanostructures (e.g., nanowire arrays), [9,10] absorber materials with multiple energy bands, [11,12] and surface plasmonic elements for subwavelength scattering [8,[13][14][15] have been designed and used in PV devices.L ight harvesting by nanowire arrays and plasmonic scattering,i nw hich multiple reflection increases light traveling path lengths,has been validated for various types of solar cells including p-n junctions, [3,10] inorganic-organic hybrids, [9,[16][17][18] and Schottky-type devices.…”