2019
DOI: 10.1016/j.jallcom.2019.03.293
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Self-power position-sensitive detector with fast optical relaxation time and large position sensitivity basing on the lateral photovoltaic effect in tin diselenide films

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Cited by 27 publications
(12 citation statements)
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“…The lack of any signal at 486.1 eV, , corresponding to the vertical dashed line of Figure a, confirms the absence of Sn–Se chemical bonds in the annealed sample. These results are congruent with O 1s and Se 3d core-level spectra of Figure b,c respectively.…”
Section: Resultssupporting
confidence: 56%
“…The lack of any signal at 486.1 eV, , corresponding to the vertical dashed line of Figure a, confirms the absence of Sn–Se chemical bonds in the annealed sample. These results are congruent with O 1s and Se 3d core-level spectra of Figure b,c respectively.…”
Section: Resultssupporting
confidence: 56%
“…For instance, the surface of the top layer in the heterojunction can be modified to improve the light absorption and decrease the resistivity, leading to an increased LPV. , Other research groups attempted to tune the LPV by applying external fields. The majority of these works focused on using different materials to form high-quality heterojunctions with a large built-in voltage to intensify the separation of the photoexcited electron–hole (e-h) pairs. Four heterostructure types are often used to generate high LPVs, including metal–semiconductor, metal-oxide–semiconductor, , oxide/insulator–semiconductor, ,, and wide/narrow band semiconductor–narrow band semiconductor. , Among them, silicon carbide on silicon (SiC/Si) heterostructures are promising platforms for generating high LPV. To date, several ultrasensitive LPE-based position-sensitive detectors utilizing SiC/Si have been reported. SiC has excellent mechanical and electrical properties and chemical inertness that make it suitable for a wide range of applications, especially for sensing devices operating in harsh environments .…”
Section: Introductionmentioning
confidence: 99%
“…A large number of potential applications have been demonstrated based on the LPE such as surface profiling, motion tracking, and angular displacement monitoring. , Position-sensitive detector (PSD), one of the most common application of the LPE, has significantly progressed over the last few decades due to the development of technologies for the synthesis of new materials and heterostructures. LPE-based PSDs can be divided into four categories based on the type of heterostructures including metal–semiconductor (MS) (e.g., Ti (Co,Cu)/Si, graphene/Si, MoS 2 /Si ), metal-oxide–semiconductor (MOS) (e.g., Co/SiO 2 /Si, SnSe/SiO 2 /Si), oxide/insulator–semiconductor (e.g., Fe 3 O 4 /Si, Bi 2 Te 2.7 Se 0.3 , ITO/Si), and wide band/narrow band semiconductor–narrow band semiconductor (e.g., SiC/Si, Sb 2 Se 3 /Si, SnSe 2 /Si). Most studies attempted to enhance the LPE by selecting appropriate materials to form high-quality junctions with a large built-in voltage.…”
Section: Introductionmentioning
confidence: 99%