2021
DOI: 10.1016/j.apsusc.2021.150818
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Self-Powered broadband photodetection of copper phthalocyanine by enhancing photogating effect with monolayer MoS2 flakes

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Cited by 16 publications
(12 citation statements)
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“…31 The obtained n value of CuPc-HT:PC 71 BM devices was 1.61 K B T/q. This value is comparable with those of the reported PC-based OPDs, 32,33 and thus it is expected to be low enough to suppress the trap-assisted recombination in V oc condition.…”
Section: Opd Propertiessupporting
confidence: 83%
“…31 The obtained n value of CuPc-HT:PC 71 BM devices was 1.61 K B T/q. This value is comparable with those of the reported PC-based OPDs, 32,33 and thus it is expected to be low enough to suppress the trap-assisted recombination in V oc condition.…”
Section: Opd Propertiessupporting
confidence: 83%
“…31 Similarly, A g -like phonon peaks of ReS 2 centered at 212.3 and 235.7 cm −1 in the dark are also blue-shifted about 1.2 cm −1 (Δw 2 ) and 1.4 cm −1 (Δw 3 ), respectively, which strongly indicate an n-type carrier doping in the ReS 2 layer under light illumination by the hole capture processes as proposed previously. 16,32,33 In the above shed of concept, we found a dip in the photocurrent response for the low-light intensity at the beginning of testing, which disappeared later on for higher intensities, as shown in Figure 4c. After the sudden light illumination, the thermal carrier concentration drops initially due to the capturing process by the photoactivated traps inside the forbidden energy gap of ReS 2 , as illustrated by the energy band diagram in Figure 4a, and the overall carrier concentration reduces accordingly for a short while at lower intensities, which results in the onset of negative photoconductance (NPC).…”
Section: Resultsmentioning
confidence: 99%
“…Photoluminescence shows intrinsic defects mediated a large Stokes’ shift of about 117 meV (59.1 nm). Raman scattering spectra were recorded to confirm large-area continuous film growth and the presence of the SiO 2 /ReS 2 interface-mediated photogating effect . Then, two-terminal planar devices of the structure Pd/ReS 2 /Pd were fabricated and demonstrated photoreceptor-cum optic nerve synaptic functionality in addition to the superior photodetection property for the hardware implementation of neuromorphic computing.…”
Section: Introductionmentioning
confidence: 99%
“…In contrast, the photogating effect is regarded as a facile method to improve responsivity by trapping certain types of carriers through defects or artificially designed hybrid structures. [21][22][23] Current researches on the photogating effect mainly focus on low-dimensional materials with photoresponse in the visible to infrared range and most cases exhibit limited responsivity enhancement depending on the band alignment. [24][25][26][27][28] So far, transparent photodetectors based on the photogating effect have not been reported, especially in the UV band.…”
Section: Introductionmentioning
confidence: 99%