Self-powered broadband photodetection using PbS decorated ZnO nanorods/reduced graphene oxide junction

Deka, Nitumoni; Chakraborty, Pinak; Patra, Dulal Chandra; Dhar, Saurab; Mondal, Sankar Prasad

doi:10.1016/j.mssp.2020.105165

Cited by 26 publications

(6 citation statements)

References 44 publications

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“…Moreover, a peak value of 78% of the external quantum efficiency was obtained at the wavelength of 400 nm. The enhanced properties was attributed to the favourable band alignment of the PbS/ZnO heterojunction [151].…”

Section: ) Core-shell-based Self-powered Ultraviolet Photodetectorsmentioning

confidence: 99%

Using Novel Semiconductor Features to Construct Advanced ZnO Nanowires-Based Ultraviolet Photodetectors: A Brief Review

Xiu-sheng

Liu

et al. 2021

IEEE Access

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Ultraviolet photodetectors have attracted significant research attention in recent years due to their potential applications in civilian and military fields. ZnO nanowires and nanorods have been regarded as the most potential candidates for ultraviolet photodetectors fabrication because of their peculiar characteristics and size effect, which are different from their bulk material. Recently, many novel routes and semiconductor features, such as the surface and interface engineering, the pryo-phototronic effect, the piezo-phototronic effect, the surface plasmon effect and the surface functionalization have been utilized to improve the photoelectric characteristics of ultraviolet photodetectors. Thus, the working mechanism of these effects existing in ZnO nanowires/nanorods-based ultraviolet photodetectors should be investigated in-depth. In this paper, firstly, the hydrothermal method and the chemical vapor deposition method, as two typical synthesis methods of ZnO nanowires are briefly reviewed. Secondly, we focus on reviewing the properties of varied ZnO nanowires/nanorods-based ultraviolet photodetectors constructed using the above mentioned semiconductor features with metal-semiconductor-metal structure, Schottky barrier structure, vertical p-n heterojunction structure and core-shell heterostructure. Furthermore, the most attractive self-powered ultraviolet photodetectors are systematically reviewed. For various ZnO nanowires/nanorods-based ultraviolet photodetectors, we put the emphasis on the working mechanism of semiconductor features to improve the properties of the photodetectors. Finally, we give an outlook on the future development of ZnO nanowires/nanorods-based ultraviolet photodetectors.

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Section: ) Core-shell-based Self-powered Ultraviolet Photodetectorsmentioning

confidence: 99%

Using Novel Semiconductor Features to Construct Advanced ZnO Nanowires-Based Ultraviolet Photodetectors: A Brief Review

Xiu-sheng

Liu

et al. 2021

IEEE Access

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“…At present, photodetector has excellent light sensitivity and ideal photoconversion efficiency and has been widely used in many fields such as optical transistors, [1][2][3] infrared sensors, [4] and electrical semiconductor detectors. [5] Therefore, manufacturing high-performance photodetectors with UV-visible applications and low cost remains a challenging job. [6][7][8][9][10] Transition metal sulfide semiconductors have received extensive attention in the field of UV-visible light detectors.…”

Section: Introductionmentioning

confidence: 99%

High‐Performance of Self‐Powered UV–Visible CdS (PVP)/PbI₂ Heterojunction Photodetector

Yang,

Huang,

Wang

et al. 2024

Physica Rapid Research Ltrs

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In this work, the PVP‐assisted CdS/PbI2 heterojunction UV‐Visible Photodetector was constructed by the sol‐gel spin coating method. The X‐ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectrometer (EDS) demonstrated the synthesis and successful complexation of PVP, CdS, and PbI2. The UV‐Visible absorption spectroscopy and UV photoelectron spectroscopy (UPS) measurements of CdS and PbI2 were carried out to prove that the CdS and PbI2 form a type II heterojunction. Compared with pure CdS film photodetector, the CdS (PVP)/PbI2 heterojunction photodetector has self‐powered characteristics, and exhibits excellent photoconductivity in the UV‐Visible with higher switching ratios, detection rates, and faster response times of 1.1 × 105, 9.77 × 1011 Jones and 20 ms, respectively, which has great potential in the field of UV‐Visible self‐powered photodetector.This article is protected by copyright. All rights reserved.

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“…When compared to a ZnO-based device, the photocurrent of the cadmium sulfide/ZnO photodetector is significantly increased. Deka et al have also fabricated the devices with lead sulfide-decorated ZnO nanorods (NRs) in conjunction, with reduced graphene oxide junction, which shows the self-powered broadband photodetection characteristics [14]. Thus, the use of different chalcogenides with ZnO has been widely explored in the literature.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of electrical properties by CuS–PVP nanocomposite on the ZnO/polymer heterojunction

Verma,

Hmar,

Swart

et al. 2024

J Chinese Chemical Soc

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A nanocomposite matrix of covellite–polyvinylpyrrolidone (CuS–PVP) was synthesized through a solution processing method and applied via spin coating onto hydrothermally grown zinc oxide (ZnO) nanorods. Characterization techniques, including X‐ray powder diffraction and scanning electron microscopy, confirmed the successful decoration of chain‐like CuS–PVP polymer composites onto hexagonal ZnO nanorods. The UV‐vis spectroscopy revealed an absorption peak at 372 nm, indicating excitonic absorption of ZnO, and a reduction in the band gap from 3.11 to 2.59 eV upon CuS–PVP polymer decoration, enhancing light harvesting efficiency. Photoluminescence spectra demonstrated the lowest charge carrier recombination rate in the ZnO/CuS–PVP sample, promoting efficient charge separation and transportation, supported by Fourier‐transform infrared analysis indicating chemical bonding. Subsequently, the impact of CuS–PVP as an insertion layer in the ZnO/poly(3,4‐ethylenedioxythiophene)‐poly(styrenesulfonate) (PEDOT:PSS) inorganic–organic heterojunction was investigated. Favorable band alignment between ZnO, CuS–PVP, and PEDOT:PSS improved conduction, increasing current from 0.3394 to 1.14 mA for D2 (poly‐ethyleneterephthalate/Indium tin oxide/ZnO/PEDOT:PSS/Al) and D1 (poly‐ethyleneterephthalate/Indium tin oxide/ZnO/CuS–PVP/PEDOT:PSS/Al) at a +2 V bias. Transient photo‐responses (J–t) at 0 V bias revealed decreased rise and fall times from 0.382 and 1.154 s to 0.301 and 0.229 s for D2 and D1 devices, respectively. This novel approach provides control over charge carrier transport characteristics at the interface, potentially benefiting self‐powered photo‐detection in optoelectronic devices.

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Self-powered broadband photodetection using PbS decorated ZnO nanorods/reduced graphene oxide junction

Cited by 26 publications

References 44 publications

Using Novel Semiconductor Features to Construct Advanced ZnO Nanowires-Based Ultraviolet Photodetectors: A Brief Review

Using Novel Semiconductor Features to Construct Advanced ZnO Nanowires-Based Ultraviolet Photodetectors: A Brief Review

High‐Performance of Self‐Powered UV–Visible CdS (PVP)/PbI₂ Heterojunction Photodetector

Enhancement of electrical properties by CuS–PVP nanocomposite on the ZnO/polymer heterojunction

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Self-powered broadband photodetection using PbS decorated ZnO nanorods/reduced graphene oxide junction

Cited by 26 publications

References 44 publications

Using Novel Semiconductor Features to Construct Advanced ZnO Nanowires-Based Ultraviolet Photodetectors: A Brief Review

Using Novel Semiconductor Features to Construct Advanced ZnO Nanowires-Based Ultraviolet Photodetectors: A Brief Review

High‐Performance of Self‐Powered UV–Visible CdS (PVP)/PbI2 Heterojunction Photodetector

Enhancement of electrical properties by CuS–PVP nanocomposite on the ZnO/polymer heterojunction

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High‐Performance of Self‐Powered UV–Visible CdS (PVP)/PbI₂ Heterojunction Photodetector