2022
DOI: 10.1016/j.ceramint.2022.05.166
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Self-powered broadband α-MoO3/Si photodetector based on photo-induced thermoelectric effect

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Cited by 16 publications
(7 citation statements)
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“…The peak value of the current is increased from 0.006 to 0.227 nA with ≈38 times increment as the V GS is from 50 to 90 V. These data indicate that the PTE effect might be present in the Te/WSe 2 MDHJs PDs which is caused by the introduction of V GS . [ 7b ] The appearance of PTE is correlated to the construction of the asymmetric Te/WSe 2 heterojunction device, and the larger thermoelectric figure of merit and adjustability of WSe 2 with its conduction type and carrier concentration.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The peak value of the current is increased from 0.006 to 0.227 nA with ≈38 times increment as the V GS is from 50 to 90 V. These data indicate that the PTE effect might be present in the Te/WSe 2 MDHJs PDs which is caused by the introduction of V GS . [ 7b ] The appearance of PTE is correlated to the construction of the asymmetric Te/WSe 2 heterojunction device, and the larger thermoelectric figure of merit and adjustability of WSe 2 with its conduction type and carrier concentration.…”
Section: Resultsmentioning
confidence: 99%
“…[ 6 ] Transient response signals are observed in MoO 3 /Si and SnSe/Si PDs which are attributed to the appearance of the PTE effect where an extra electric field is generated by a photo‐induced temperature gradient at the interface. [ 7 ] Therefore, MDHJs PDs are the prospect in human vision systems, in‐sensor computing, computing in memory, and neuromorphic devices through the various synergistic effects of PC, PV, and PTE. [ 8 ]…”
Section: Introductionmentioning
confidence: 99%
“…Firstly, the absorption layer (also called the absorber), is applied to absorb the THz wave radiation. Typically, a patterned metamaterial [26,55] or a semiconductor layer [56,57] is used as the absorber to enhance the absorption of THz waves and maximize the interaction between the THz radiation and the detector. Secondly, as mentioned above, the thermoelectric element transforms the absorbed THz radiation into a detectable electrical signal with the assistance of an absorption layer.…”
Section: Photothermoelectric Detectormentioning
confidence: 99%
“…However, recent reports have proven that with a suitable architecture and material structure, practical applications using molybdenum oxides as a PD are possible. Zhao et al [119] report MoO 3 /Si heterojunction PDs fabricated by using an e-beam evaporation method. The I-V curve under 405 nm light irradiation in figure 10(a) shows the standard photosensing characteristics of such a design.…”
Section: Pdsmentioning
confidence: 99%