2019
DOI: 10.1088/1361-6528/ab18c2
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Self-powered diamond ultraviolet photodetector with a transparent Ag nanowire electrode

Abstract: A novel diamond UV photodetector with a transparent Ag nanowire (NW) electrode was fabricated. A transparent Ag NW network was spin-coated on single crystalline diamond to form a Schottky contact, which had a barrier height of about 1.37 eV obtained by XPS measurements. Meanwhile, multilayered metals of Au/Pt/Ti were evaporated on the diamond sample to form ohmic contacts. Compared to a Au/Pt/Ti-Au/Pt/Ti diamond photodetector, the Au/Pt/Ti-Ag NW diamond photodetector exhibited relatively high responsivity unde… Show more

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Cited by 10 publications
(9 citation statements)
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“…Since been discovered, MXenes are proved to have great potential and application in energy storage and catalysis because of their highly active surfaces, good conductivity, abundant functional groups, and facile synthesis. [ 8–11 ] For instance, Ti 3 C 2 has been proved to have good performance as anode materials for LIB with 123.6 mAh g –1 at 1 C rate. [ 12 ] Theoretical study identified a low barrier (0.068–0.070 eV) of Li diffusing above the surface.…”
Section: Introductionmentioning
confidence: 99%
“…Since been discovered, MXenes are proved to have great potential and application in energy storage and catalysis because of their highly active surfaces, good conductivity, abundant functional groups, and facile synthesis. [ 8–11 ] For instance, Ti 3 C 2 has been proved to have good performance as anode materials for LIB with 123.6 mAh g –1 at 1 C rate. [ 12 ] Theoretical study identified a low barrier (0.068–0.070 eV) of Li diffusing above the surface.…”
Section: Introductionmentioning
confidence: 99%
“…14 Thus, the LDR of detector Mesh reaches 105.9 dB at 220 nm and 0 V bias, which is significantly higher than the LDR of 41 dB of a self-powered diamond ultraviolet photodetector with a transparent Ag nanowire electrode. 14 From Figure 4, the detectors with responsivity larger than 1000 mA/W are located at the upper right while those with smaller than 200 mA/W are located at the lower left. It might be inferred that detectors with higher dark current can easily obtain high responsivity, but their SNR is usually lower.…”
Section: ■ Results and Discussionmentioning
confidence: 85%
“…Inset: optical image of detector Semi (left) and Mesh (right) taken by Redmi K40 Pro. Data in this figure from references. ,,, …”
Section: Resultsmentioning
confidence: 99%
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