Self-powered In2Se3/Ge photodetector from a visible to short-wave infrared region
Kuangkuang Li,
Wenbo Li,
Kang Ling
et al.
Abstract:An In2Se3/Ge heterojunction is fabricated via molecular beam epitaxy. The p–n junction device features a broadened photosensitive spectrum ranging from a visible (VIS) to short-wave infrared (SWIR) region (400–1700 nm). Notably, self-powered high responsivity of 0.32 A/W@450 nm and 0.52 A/W@1550 nm, decent specific detectivity of 3.2 × 1011 Jones@450 nm, and 5.2 × 1011 Jones@1550 nm at zero bias are achieved. Moreover, our photodetector exhibits a fast response speed with a sub-millisecond response time. These… Show more
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