Self‐powered light‐induced plating for III‐V/Ge triple‐junction solar cell metallization

Laucher, Clément; Hamon, Gwénaëlle; Turala, Artur; Volatier, M.; Darnon, Maxime; Aimez, Vincent; Jaouad, Abdelatif

doi:10.1002/ese3.774

Cited by 2 publications

(1 citation statement)

References 13 publications

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“…After epitaxy, one of the major costs during the fabrication of III-V solar cells is the front contact metallization [2]. Several variations of the metallization and/or metal deposition technique have been studied in order to reduce this cost [6][7][8][9]. In particular, it was shown that the standard AuGe/Ni/Au front ohmic contact metallization could be replaced by a thin Pd/Ge/Ti/Pd stack combined with a thick Al layer [9].…”

Section: Introductionmentioning

confidence: 99%

Low-Cost Passivated Al Front Contacts for III-V/Ge Multijunction Solar Cells

Richard,

Turala,

Aimez

et al. 2023

Energies

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Improving the performances and reducing costs of III-V multijunction solar cells are crucial in aerospatial energy systems and in terrestrial concentrator modules. We attempted to achieve both objectives by implementing non-ohmic metal/semiconductor interface contacts on the front surface of III-V/Ge triple-junction solar cells. We demonstrate the feasibility of this concept for this type of solar cell by a simple evaporation of Al only either on the GaAs contact layer or the AlInP window. The best results were obtained when sulfur passivation by (NH4)2Sx was conducted on the GaAs contact layer. This allowed for a reduction in reverse saturation dark current density by one order of magnitude and a slight increase in Voc of almost 20 mV under 1 sun illumination relative to a reference device with Pd/Ge/Ti/Pd ohmic contacts. However, poor performances were observed at first under concentrated sunlight. Further annealing the solar cells with Al front metallization resulted in the reduction of Voc to the same level as the reference solar cell but allowed for good performances under high illumination. Indeed, an efficiency over 34% was observed at 500 suns light intensity both for Al and Pd/Ge/Ti/Pd contacted solar cells.

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Section: Introductionmentioning

confidence: 99%

Low-Cost Passivated Al Front Contacts for III-V/Ge Multijunction Solar Cells

Richard,

Turala,

Aimez

et al. 2023

Energies

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Experimental Investigation of High-Viscosity Conductive Pastes and the Optimization of 3D Printing Parameters

Zhang

Wang

et al. 2023

Applied Sciences

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Traditional contact printing technology is primarily controlled by the shape of the mask to form the size, while for the more popular non-contact printing technologies, in recent years, adjusting the print parameters has become a direct way to control the result of the printing. High-viscosity conductive pastes are generally processed by screen printing, but this method has limited accuracy and wastes material. Direct-write printing is a more material-efficient method, but the printing of high-viscosity pastes has extrusion difficulties, which affects the printed line width. In this paper, we addressed these problems by studying the method of printing high-viscosity conductive paste with a self-made glass nozzle. Then, by parameter optimization, we achieved the minimum line width printing. The results showed that the substrate moving speed, the print height, and the feed pressure were the key factors affecting the line width and stability. The combination of the printing parameters of 0.6 MPa feed pressure, 200 mm/s substrate moving speed, and 150 μm print height can achieve a line width of approximately 30 μm. In addition, a mathematical model of the line width and parameters was established, and the prediction accuracy was within 5%. The results and the prediction model of the parameters provide an important reference for the printing of high-viscosity pastes, which have immense potential applications in electronics manufacturing and bioprinting.

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Self‐powered light‐induced plating for III‐V/Ge triple‐junction solar cell metallization

Abstract: This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

Cited by 2 publications

References 13 publications

Low-Cost Passivated Al Front Contacts for III-V/Ge Multijunction Solar Cells

Low-Cost Passivated Al Front Contacts for III-V/Ge Multijunction Solar Cells

Experimental Investigation of High-Viscosity Conductive Pastes and the Optimization of 3D Printing Parameters

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