Self-powered, low-noise and high-speed nanolayered MoSe₂/p-GaN heterojunction photodetector from ultraviolet to near-infrared wavelengths

Abstract

Integration of nanolayered metal chalcogenides with wide-bandgap semiconductors forming pn heterojunction leads to the way of high-performance photodetection. This work demonstrates the fabrication of a few nanometer thick Molybdenum diselenide (MoSe2)/ Mg-doped Gallium Nitride (p-GaN) heterostructure for light detection purposes. The device exhibits low noise broadband spectral response from ultraviolet to near-infrared range (300 nm – 950 nm). The band-alignment and the charge transfer at the MoSe2/p-GaN interface promote self-powered photodetection with high photocurrent to dark current ratio of 2000 and 1000 at 365 nm and 640 nm, respectively. A high responsivity of 130 A/W, detectivity of 4.8 × 1010 Jones, and low noise equivalent power (NEP) of 18 fW/Hz1/2 at 365 nm is achieved at an applied bias of 1V. Moreover, the transient measurements reveal a fast rise/fall time of 407/710 µsec for the fabricated device. These outcomes exemplify the viability of MoSe2/p-GaN heterostructure for high-speed and low-noise broadband photodetector applications.

Vertical Van Der Waals Epitaxy of p‐MoxRe1‐Xs2 on GaN for Ultrahigh Detectivity Uv–vis–NIR Photodetector

“…Furthermore, as illustrated in Figure 5f,g, the fully vertical p‐Mo x Re 1‐ x S 2 /GaN photodetector showcases the most superior performance when exposed to 365 nm light irradiation. From similar devices in the benchmark, [ 21,25,71–97 ] it exhibits an impressively low NEP value of 7.26 × 10 −18 W/Hz 1/2 , indicating excellent sensitivity, and achieves the highest D * value of 6.13 × 10 14 Jones, reflecting its outstanding detectivity. The superiority of vertical devices over others primarily lies in the fact that, compared to lateral devices, the current flows longitudinally in vertical devices, allowing for a larger conduction area capable of withstanding higher power densities.…”

Large‐Scale Solution‐Processed Ultrathin 2D Tri‐layer Heterostructures for Photodetector Applications

“…There was no significant change in photocurrent observed under negative bias. The theory of thermionic emission [40,41] of charge carriers can be used to interpret the asymmetric behaviour of current at negative and positive biased potentials in the I-V curve. This suggests that the current passage in the heterojunction is guided by the recombination and tunnelling mechanisms, instead of only the transport of carriers by thermionic emission.…”

First-principles study on the effect of point defects on the magnetic new mechanism and optical properties of the GaN:Be/Mg/Ca system

“…Clerjaud et al [11] investigated the infrared spectra of the local vibrational modes of Mg-H in GaN under polarized light by organometallic vapor phase epitaxial growth method and found that the vibrational modes of the complexes aligned along the c-axis could not be observed based on optical configuration. Sandhu et al [12] designed MoSe 2 /p-GaN heterojunction photodetection and found low noise response to a broadband spectral from UV to NIR near-infrared (IR) range (300-950 nm). Liu et al [13] investigated the Bragg reflection distribution of porous GaN NIR by using an electrochemical oxidation method and found that the peak reflectance of the reflector was approximately 95% in the range of 550-1750 nm.…”