Self-powered transparent ultraviolet photo-sensors based on bilayer p-NiO/n-Zn(1−x) Sn(x)O heterojunction

Bhat, Prashant; Salunkhe, Parashurama; Murari, M.S.; Kekuda, Dhananjaya

doi:10.1016/j.sna.2022.113479

Cited by 17 publications

(4 citation statements)

References 38 publications

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“…The development of broad-diffraction peak along (110) at 150 °C and 200 °C annealed samples may be due to grain coalescence at higher thermal energy [16]. To find the crystallite sizes, the Scherer's formula was used [17], and the calculated structural parameters are mentioned in Table 1. A slight decrement in the crystallite sizes after Sn doping compared to pristine ZnO was observed that may be due to development of strain in the crystal matrix because of difference in the ionic radii.…”

Section: Structural Propertiesmentioning

confidence: 99%

“…A slight decrement in the crystallite sizes after Sn doping compared to pristine ZnO was observed that may be due to development of strain in the crystal matrix because of difference in the ionic radii. Likewise, the dislocation density ( ) and micro-strain ( ) were determined using the relations as mentioned below [17] where is the X-ray wavelength (Cu Kα = 1.5406 Å), is Full-Width Half Maximum (FWHM), θ is the Bragg angle, and D is crystallite sizes obtained from Scherrer's formula. Initially, the increment in the micro-strain and dislocation densities were observed in TZO-RT sample; later, after post-annealing treatment, these quantities were relaxed as expected.…”

Section: Structural Propertiesmentioning

confidence: 99%

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Self-powered visible transparent $$\mathrm{Cu}/{\mathrm{Zn}}_{\left(1-x\right)}{\mathrm{Sn}}_{\left(x\right)}\mathrm{O}$$ Schottky-based ultraviolet photosensors fabricated via DC magnetron sputtering

2023

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Visible transparent $$\mathrm{Cu}/\mathrm{n}-\mathrm{ZnO}$$ Cu / n - ZnO and $$\mathrm{Cu}/{\mathrm{Zn}}_{\left(1-x\right)}{\mathrm{Sn}}_{\left(x\right)}O\left(x=0.14\right) \mathrm{TZO},$$ Cu / Zn 1 - x Sn x O x = 0.14 TZO , Schottky junctions were successfully fabricated on ITO-coated glass substrates via direct current magnetron reactive sputtering method. The structural, morphological, optical, and electrical properties were thoroughly investigated. The polycrystalline nature of the samples was confirmed by XRD studies. FESEM images validate the changes in surface morphology after doping and annealing, and AFM analysis confirmed the variation in surface roughness. The electrical analysis reveals the presence of a Schottky barrier in the fabricated devices. In dark condition, three-order rectification ratio was observed. A two-order increase in leakage current was also observed after illuminating 365 nm UV light of power 60 µW/cm2. The figures of merits of sensors, such as responsivity, detectivity, response speed, and linear dynamic range, were thoroughly investigated. The fabricated sensor had a responsivity of about 07.80 mA/W and a detectivity of 1.39 × 1011 Jones. At zero bias, the sensor also demonstrated a transient photocurrent response of approximately 783 ms for rise and 876 ms for fall. Similarly, 33.70 dB of linear dynamic range was observed. These findings suggests that Cu/TZO Schottky diodes could be useful for self-powered, visible transparent UV photosensors in next-generation optoelectronic devices.

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Section: Structural Propertiesmentioning

confidence: 99%

Section: Structural Propertiesmentioning

confidence: 99%

Self-powered visible transparent $$\mathrm{Cu}/{\mathrm{Zn}}_{\left(1-x\right)}{\mathrm{Sn}}_{\left(x\right)}\mathrm{O}$$ Schottky-based ultraviolet photosensors fabricated via DC magnetron sputtering

2023

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“…2D alloys and heterojunctions make full use of the nano-scale advantages of 2D materials in the vertical direction, showing great application potential and scientific research value for electronics and optoelectronics. [125][126][127] 2D material heterostructures refer to heterojunctions formed by the close packing of two or more different 2D materials, or the composite structures formed by the close contact between 2D materials and other nanomaterials. The two or more materials that constitute the heterostructure have different band gaps, electrical properties, doping types, optical absorption and luminescence, dielectric constant, work function, etc.…”

Section: Self-powered Sensors Based On Alloys and Heterostructuresmentioning

confidence: 99%

Integrated Self‐Powered Sensors Based on 2D Material Devices

Huo

Wei

Wang

et al. 2022

Adv Funct Materials

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With the development of the Internet of Things, there is an increasing need for clean energy and large-scale sensory systems. Triboelectric/piezoelectric nanogenerators (TENGs/PENGs), have attracted considerable attention as a new type of power generation terminal, which can harvest surrounding energy and convert it into electrical energy. To improve the output performance of nanogenerators (NGs) and diversify related applications, 2D materials with high carrier mobility and excellent piezoelectric properties can be directly used or integrated as different types of self-powered sensors. In this review, the authors first introduce the excellent piezoelectric and optoelectronic properties of 2D materials, followed by the triboelectric series of 2D materials used in TENGs. The categories of integrated self-powered sensors based on 2D materials are then summarized according to their different structures and compositions. We also discuss in detail the recent applications of integrated self-powered sensors based on 2D materials from five aspects. Finally, the challenges and outlooks in the research field of self-powered sensors are featured. Given the continuous development of self-powered sensors based on 2D materials, they are considered to have significant potential for applications in biomedicine, environmental detection, human motion monitoring, energy harvesting, and smart wearable devices.

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“…Intrinsically, it exhibits n-type semiconducting nature with an energy band gap that varies from 3.2-3.4 eV, is chemically well stable and suitable for nanofabrication [5]. The vast intrinsic characteristics of the NiO and ZnO materials are promising for the UV solar-blind photodetector, hole transport layer, an electron blocking layer, light emitting diodes, thin-film transistors, memory devices and p-n diodes etc [11][12][13][14][15][16][17][18][19]. It is feasible to utilize p-NiO/n-ZnO thin films to form a heterojunction having suitability of the type-II band structure and it leads to enhancing the carrier transport mechanism at the interface.…”

Section: Introductionmentioning

confidence: 99%

A flexible bilayer p-NiO/n-ZnO films with photodetecting properties in self power mode

Salunkhe¹,

Bhat²,

Kekuda³

2022

Phys. Scr.

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We report highly efficient flexible p-NiO/n-ZnO heterojunction UV photodetectors. NiO and ZnO thin films were grown on plastic polyethylene terephthalate (PET) substrates by dc magnetron sputtering for constructing high quality interfaces. The diode has shown an excellent rectification ratio i.e. 106 under dark mode and observed more than 80% transparency in the visible region. Investigated structural, compositional, and optical properties of the film to correlate the UV photodetector transport characteristics. Further, UV illumination devices exhibit an excellent responsivity of 0.24A/W with a detectivity of 1.25 x 1011 jones and the highest external quantum efficiency of 83.14% achieved at -5V of bias. The device shows the fastest speed of response with rise/fall times of 86.10ms/106.60ms, accomplished at -1V with the lowest optical power density. The photodiode has shown incredible characteristics that are mainly attributed to the built-in potential and the transport mechanism at the interface.

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Self-powered transparent ultraviolet photo-sensors based on bilayer p-NiO/n-Zn(1−x) Sn(x)O heterojunction

Cited by 17 publications

References 38 publications

Self-powered visible transparent $$\mathrm{Cu}/{\mathrm{Zn}}_{\left(1-x\right)}{\mathrm{Sn}}_{\left(x\right)}\mathrm{O}$$ Schottky-based ultraviolet photosensors fabricated via DC magnetron sputtering

Self-powered visible transparent $$\mathrm{Cu}/{\mathrm{Zn}}_{\left(1-x\right)}{\mathrm{Sn}}_{\left(x\right)}\mathrm{O}$$ Schottky-based ultraviolet photosensors fabricated via DC magnetron sputtering

Integrated Self‐Powered Sensors Based on 2D Material Devices

A flexible bilayer p-NiO/n-ZnO films with photodetecting properties in self power mode

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