2018
DOI: 10.1016/j.ceramint.2017.12.024
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Self-propagating high-temperature synthesis of single-phase binary tantalum-hafnium carbide (Ta,Hf)C and its consolidation by hot pressing and spark plasma sintering

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Cited by 48 publications
(20 citation statements)
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“…Microstructure a, c) and EDS maps b, d) of the mixture 75.21%Ta + 18,55%Hf + 6,24%C after the MA at 678 rpm a, b) and 900 rpm c, d) . Modified with permission.…”
Section: Ta–hf–c Systemmentioning
confidence: 99%
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“…Microstructure a, c) and EDS maps b, d) of the mixture 75.21%Ta + 18,55%Hf + 6,24%C after the MA at 678 rpm a, b) and 900 rpm c, d) . Modified with permission.…”
Section: Ta–hf–c Systemmentioning
confidence: 99%
“…Combustion product had a relative density of 60% and the carbide's grains size about 1–5 µm. Optimization of the synthesis conditions allowed to produce the single‐phase complex carbide (Ta,Hf)C with 18.0 at% HfC in solid solution and lattice parameter of 0.4487 nm (Figure b) …”
Section: Ta–hf–c Systemmentioning
confidence: 99%
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“…The modern promising method for creating refractory materials is the Spark Plasma Sintering (SPS) (used in this paper). Its advantages over the more classical hot pressing method were demonstrated in [7] for the Ta-Hf-C system. However, the publications about the SPS obtaining materials in the Hf-C-N system are absent.…”
Section: Introductionmentioning
confidence: 99%