Self‐Propagating High‐Temperature Synthesis of Ti₃SiC₂: Study of the Reaction Mechanisms by Time‐Resolved X‐Ray Diffraction and Infrared Thermography

Abstract

Ti3SiC2 is synthesized by self‐propagating high‐temperature synthesis (SHS) of elemental titanium, silicon, and graphite powders. The reaction paths and structure evolution are studied in situ during the SHS of the 3Ti+Si+2C mixture by time‐resolved X‐ray diffraction coupled with infrared thermography. The proposed reaction mechanism suggests that Ti3SiC2 might be formed from Ti–Si liquid phase and solid TiCx. Finally, the effect of the powders starting composition on the Ti3SiC2 synthesis is studied. For the investigated initial mixtures, TiCx is always formed as a major impurity together with the Ti3SiC2 phase.

Reaction synthesis of Ti3SiC2 phase in plasma sprayed coating

“…As compared with the results reported by Gauthier et al [9], it is pointed out that the common characteristics in the present research are TiC and Ti 5 Si 3 formed as impurity under the condition of rapid heating rate, but the amount of Ti 3 SiC 2 in final plasma-sprayed product decreases dramatically, which strongly illustrates that processing time (reaction time) of precursor powders is vital factor affecting Ti 3 SiC 2 formation. The amount of synthesized Ti 3 SiC 2 phase depends largely not only on the reactant constituents (TiC x and Ti-Si liquid phase) but also on the reaction time.…”

“…Since then, several processing techniques have been developed to synthesize single-phase, bulk, polycrystalline Ti 3 SiC 2 . These processing techniques include arc melting [5], direct sintering [6], reactive hot-pressing (HP) [1], hot-isostatic pressing (HIP) [3], spark plasma sintering (SPS) [7], pulse discharge sintering (PDS) [8] and self-propagating high-temperature synthesis (SHS) [9]. A variety of precursor materials viz.…”

“…A variety of precursor materials viz. Ti-Si-C [4,5,9], Ti-Si-TiC [10,11], Ti-SiC-C [1], Ti-Si-C-SiC [12] and Ti-SiC-TiC [13] have been employed for synthesis of Ti 3 SiC 2 . Of these processing techniques, most of them are perceived to be energy intensive because of both requirement of high temperature (∼1450-1700 • C) and long processing time of approximately 4 h [3,5,6].…”

“…Of these processing techniques, most of them are perceived to be energy intensive because of both requirement of high temperature (∼1450-1700 • C) and long processing time of approximately 4 h [3,5,6]. SPS and SHS techniques are rapid processing techniques, which have been reported to synthesize Ti 3 SiC 2 within 10 min [7] and tens of seconds [9], respectively. * Corresponding author.…”

Microstructure and Properties of Carbon Fiber Reinforced SiC Matrix Composites Containing Ti3SiC2

“…[36] alloy, which remained in the final product owing to the rapid decrease of local temperature. Such a Ti-Si liquid phase also can be found in the previous works, [42,43] in which the Ti-Si eutectic phase was an important intermediate phase to the formation of Ti 3 SiC 2 .…”