Self-pulsing 104 A cm−2 current density discharges in dielectric barrier Al/Al2O3 microplasma devices

Yarmolich, D.; Krasik, Ya. E.; Stambulchik, E.; Bernshtam, V.; Yoon, Jongseung; Herrera, Bernard; Park, S. J.; Eden, J. G.

doi:10.1063/1.3064159

Cited by 12 publications

(3 citation statements)

References 11 publications

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“…Consequently, the cathode fall potential in the gas phase plasma is also electronically controllable. [12]. Thus, in surveying the landscape of e − -h + and e − -ion (gas phase) plasma characteristics, one cannot avoid the conclusion that not only are the two related from a general, philosophical perspective, but any distinctions between them with regard to physical parameters are vanishing rapidly.…”

Section: The Recent Realization Of Optoelectronic Devices Based On Inmentioning

confidence: 94%

Control of the Interface Between Electron‐Hole and Electron‐Ion Plasmas: Hybrid Semiconductor‐Gas Phase Devices as a Gateway for Plasma Science

Tchertchian

Wagner

Houlahan

et al. 2011

Contrib. Plasma Phys.

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Coupling electron-hole (e − -h + ) and electron-ion plasmas across a narrow potential barrier with a strong electric field provides an interface between the two plasma genres and a pathway to electronic and photonic device functionality. The magnitude of the electric field present in the sheath of a low temperature, nonequilibrium microplasma is sufficient to influence the band structure of a semiconductor region in immediate proximity to the solid-gas phase interface. Optoelectronic devices demonstrated by leveraging this interaction are described here. A hybrid microplasma/semiconductor photodetector, having a Si cathode in the form of an inverted square pyramid encompassing a neon microplasma, exhibits a photosensitivity in the ∼ 420 -1100 nm region as high as 3.5 A/W. Direct tunneling of electrons into the collector and the Auger neutralization of ions arriving at the Si surface appear to be facilitated by an n-type inversion layer at the cathode surface resulting from bandbending by the microplasma sheath electric field. Recently, an npn plasma bipolar junction transistor (PBJT), in which a low temperature plasma serves as the collector in an otherwise Si device, has also been demonstrated. Having a measured small signal current gain h fe as large as 10, this phototransistor is capable of modulating and extinguishing the collector plasma with emitter-base bias voltages < 1 V. Electrons injected into the base when the emitter-base junction is forward-biased serve primarily to replace conduction band electrons lost to the collector plasma by secondary emission and ion-enhanced field emission in which ions arriving at the base-collector junction deform the electrostatic potential near the base surface, narrowing the potential barrier and thereby facilitating the tunneling of electrons into the collector. Of greatest significance, therefore, are the implications of active, plasma/solid state interfaces as a new frontier for plasma science. Specifically, the PBJT provides the first opportunity to control the electronic properties of a material at the boundary of, and interacting with, a plasma. By specifying the relative number densities of free (conduction band) and bound (valence band) electrons at the base-collector interface, the PBJT's emitter-base junction is able to dictate the rates of secondary electron emission (including Auger neutralization) at the semiconductor-plasma interface, thereby offering the ability to vary at will the effective secondary electron emission coefficient for the base surface.

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Section: The Recent Realization Of Optoelectronic Devices Based On Inmentioning

confidence: 94%

Control of the Interface Between Electron‐Hole and Electron‐Ion Plasmas: Hybrid Semiconductor‐Gas Phase Devices as a Gateway for Plasma Science

Tchertchian

Wagner

Houlahan

et al. 2011

Contrib. Plasma Phys.

Self Cite

View full text Add to dashboard Cite

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“…Indeed, experiments of the past two decades have demonstrated that, depending upon the microcavity design, fill gas mixture and pressure, and driving voltage, steady-state n e values of 10 12 -10 15 cm −3 are obtained routinely in CW microplasmas. Pulsed excitation has extended the range in peak electron densities in rare gas plasmas from 10 16 to >10 17 cm −3 [33], and figure 4 shows that such values for the electron number density place microcavity plasmas in uncharted territory. Prepared by Prof. Tachibana [34], this figure is a map of a portion of plasma parameter space in which the characteristic dimension of the plasma (d), shown by the abscissa, ranges from 100 mm to 10 −5 mm.…”

Section: Overview Of Microplasma Physics and Characteristicsmentioning

confidence: 99%

Foundations of plasma photonics: lamps, lasers, and electromagnetic devices

Nijdam

Desai

Park

et al. 2022

Plasma Sources Sci. Technol.

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The enduring contributions of low temperature plasmas to both technology and science are largely a result of the atomic, molecular, and electromagnetic (EM) products they generate efficiently such as electrons, ions, excited species, and photons. Among these, the production of light has arguably had the greatest commercial impact for more than a century, and plasma sources emitting photons over the portion of the EM spectrum extending from the microwave to soft X-ray regions are currently the workhorses of general lighting (outdoor and indoor), photolithography for micro- and nano-fabrication of electronic devices, disinfection, frequency standards (atomic clocks), lasers, and a host of other photonic applications. In several regions of the EM spectrum, plasma sources have no peer, and this article is devoted to an overview of the physics of several selected plasma light sources, with emphasis on thermal arc and fluorescent lamps and the more recently-developed microcavity plasma lamps in the visible and ultraviolet/vacuum ultraviolet (VUV) regions. We also briefly review the physics of plasma-based metamaterials and plasma photonic crystals (PPCs) in which low temperature plasma tunes the EM properties of filters, resonators, mirrors, and other components in the microwave, mm, and sub-mm wavelength regions.

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“…Confining low-temperature plasma to cavities having a characteristic dimension d below 1 mm was quickly found to yield plasmas capable of operating continuously at atmospheric pressure, and yet efficiently populating highly excited states of both neutral and ionic species. [1][2][3][4][5] Not only have peak electron densities (n e ) >10 17 cm −3 been reported, [6] but the close association between n e and the local values of E/N and T e results in plasmas in which E (magnitude of the electric field) and E/N frequently exceed 10 4 V/cm and 10 −15 V-cm 2 (100 Td), respectively. [5,7] The former of these (1 V/μm) is near or above the threshold for Fowler-Nordheim electron emission from nanostructures located on the cavity wall, thereby allowing for the injection of electrons into the plasma sheath.…”

Section: Introductionmentioning

confidence: 99%

Commercialization of microcavity plasma devices and arrays: Systems for VUV photolithography and nanopatterning, disinfection of drinking water and air, and biofilm deactivation for medical therapeutics

Kim

Mironov

Cho

et al. 2022

Plasma Processes & Polymers

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A little more than two decades after the introduction of the first microcavity plasma devices, a growing body of commercial products based on the remarkable properties of these low-temperature, atmospheric plasmas is now available. Following a brief review of early microplasma lamp development, this article describes microplasma-based devices and systems currently being manufactured for applications in photolithography, photopatterning, and other nanofabrication Plasma Process Polym. 2022;e2200075 www.plasma-polymers.com

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Self-pulsing 104 A cm−2 current density discharges in dielectric barrier Al/Al2O3 microplasma devices

Cited by 12 publications

References 11 publications

Control of the Interface Between Electron‐Hole and Electron‐Ion Plasmas: Hybrid Semiconductor‐Gas Phase Devices as a Gateway for Plasma Science

Control of the Interface Between Electron‐Hole and Electron‐Ion Plasmas: Hybrid Semiconductor‐Gas Phase Devices as a Gateway for Plasma Science

Foundations of plasma photonics: lamps, lasers, and electromagnetic devices

Commercialization of microcavity plasma devices and arrays: Systems for VUV photolithography and nanopatterning, disinfection of drinking water and air, and biofilm deactivation for medical therapeutics

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