Self-Q-switched and wavelength-tunable tungsten disulfide-based passively Q-switched Er:Y₂O₃ ceramic lasers

Abstract

We report on diode-pumped Er:Y 2 O 3 ceramic lasers at about 2.7 μm in the tunable continuous-wave, self-Q-switching and tungsten disulfide (WS 2 )-based passively Q-switching regimes. For stable self-Q-switched operation, the maximum output power reaches 106.6 mW under an absorbed power of 2.71 W. The shortest pulse width is measured to be about 1.39 μs at a repetition rate of 26.7 kHz at maximum output. Using a spin-coated WS 2 as a saturable absorber, a passively Q-switched Er:Y 2 O 3 ceramic laser is also realized with a maximum average output power of 233.5 mW (for the first time, to the best of our knowledge). The shortest pulse width decreases to 0.72 μs at a corresponding repetition rate of 29.4 kHz, which leads to a pulse energy of 7.92 μJ and a peak power of 11.0 W. By inserting an undoped YAG thin plate as a Fabry-Perot etalon, for the passive Q switching, wavelength tunings are also demonstrated at around 2710, 2717, 2727, and 2740 nm.

2D Layered Materials: Synthesis, Nonlinear Optical Properties, and Device Applications

“…Since 2010, Q‐switched solid‐state lasers based on layered materials including graphene, topological insulators, TMDCs, BP, and g‐C 3 N 4 , have been developed rapidly, as shown in Table . It can be seen that these lasers have excellent performance in output power, pulse width, repetition rate, and peak power.…”

“…For example, the researchers achieved the visible‐light Q‐switched laser using topological insulators . In addition, 3‐µm Q‐switched lasers based on layered materials have also been widely studied . Second, besides single‐wavelength operation, multiwavelength Q‐switched lasers have been also developed .…”

Hafnium Sulfide Nanosheets for Ultrafast Photonic Device

“…Several approaches have been developed to achieve stable and reliable light‐matter interaction between light and nanomaterials, in order to construct compact and compatible fiber devices . The integration approach is so important that it directly influences the output performance of the devices.…”

“…The TMDs with layered structure can be exfoliated into atomic‐thin layers, which advance the development of wider applications as high‐performance transistors, photodetectors and nonlinear optical devices owing to their widespread bandgaps from the visible to the near‐infrared region . Currently, nonlinear optical devices based on group VIB TMDs have been fully studied using as saturable absorbers (SA) for the successful generation of short pulses in broadband region . Despite the previous efforts, it is still possible to optimize the SA devices toward ultrafast photonics for the admired purposes of generating laser pulse with shorter pulse width and greater output power, which can be anticipated by exploring other members of TMDs.…”

Synthesis of WS1.76Te0.24 alloy through chemical vapor transport and its high-performance saturable absorption

“…X. Guan et al . experimentally realized 2.7 μm self-Q-switching laser of Er:Y 2 O 3 based on WS 2 SA with pulse width of 1.36 µs 20 . The passively Q-switched lasers at the wavelengths of 1.5, 2.0, 2.7 μm are based on the binary TMDs with defects 14–22 .…”