Self quenching of extrinsic photoconductivity in GaAs:Cr

Spectral photoconductivity curves of SI GaAs:Cr crystals are measured in the extrinsic region using the two light sources method; high intensity monochromatic illumination ensures steady‐state population of levels; and probe light of low intensity serves to measure corresponding photoconductivity curves. The set of obtained curves is decomposed into elementary contributions using the minimization program MINUIT. The obtained photoionization cross‐sections are compared with those from absorption measurements and interpreted as transitions involving Cr2+, Cr3+, and Cr4+ ions. The influence of interaction among impurities and of internal electric field on the photoionization cross‐section is discussed.

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The study of impurity levels in LEC semi-insulating GaAs:Cr samples by two-source photoconductivity measurements

Pastrňák

Karel

Oswald

et al. 1987

Phys. Stat. Sol. (a)

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Photoionization Cross‐Section for δ‐Shell Deep Levels

Masut¹,

Penchina²

1985

Physica Status Solidi (b)

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A 6-shell model is presented of deep impurities in semiconductors as a simple but effective extension of the well-known &function model of Lucovsky, in order to address the problem of fairly sharp photo-ionization spectra. Whereas Lucovsky treated only the photo-ionization of electrons from s-like impurity states to the conduction band (forbidden transitions), this paper considers also the photo-ionization of holes t o the valence band (allowed transitions). The new %-shell model gives an improved fit to experimental photo-ionization data. It can be used to determine the range of the deep impurity potential as well as the binding energy, and can help to determine the nature of the photoionized charge (electron/hole).Ein 6-Schalenmodell tiefer Storstellen in Halbleitern zur Behandlung des Problems der ziemlich spitzen Photoionisationsspektren wird als einfache aber effektive Erweiterung des gut bekannten 8-Funktionsmodell von Lukovsky angegeben. Wiihrend Lukovsky nur die Photoionisation von Elektronen aus s-Storstellenzustanden ins Leitungsband (verbotene ifbergiinge) behandelt, wird hierbei auch die Photoionisation von Lochern in das Valenzband (erlaubte ifber-gLnge) beriicksichtigt. Das neue 6-Schalenmodell ergibt eine verbesserte Anpassung an experimen telle Photoionisationsdaten. Es 1aBt sich zur Bestimmung des Bereichs des Potentials der tiefen Storstelle sowie der Bindungsenergie benutzen und kann helfen, die Art der photoionisierten Ladung (Elektron/Loch) zu bestimmen.

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Double source optical absorption and spectral photoconductivity measurements in the extrinsic region of semiconductors

Pastrňák

1987

Czech J Phys

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Self quenching of extrinsic photoconductivity in GaAs:Cr

Cited by 4 publications

References 10 publications

The study of impurity levels in LEC semi-insulating GaAs:Cr samples by two-source photoconductivity measurements

The study of impurity levels in LEC semi-insulating GaAs:Cr samples by two-source photoconductivity measurements

Photoionization Cross‐Section for δ‐Shell Deep Levels

Double source optical absorption and spectral photoconductivity measurements in the extrinsic region of semiconductors

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