Self-rectifying resistive switching device based on n-ZnO/p-NiO junction

Abstract

The n-ZnO/p-NiO junctions have been fabricated by sol-gel method using Al as top electrodes and ITO as bottom electrodes for applications in resistive switching devices. Such devices exhibit homogenous and filamentary characteristics depending on the amplitude of applied bias. The two switching types show different switching polarities and transport mechanisms. Under a higher bias, the filamentary behavior is dominated by Ohmic conduction at low resistance state and trap related Poole-Frenkel conduction at high resistance state, while under a lower bias the homogenous switching exhibits diode conduction at high resistance state and space charge limited current at low resistance state. The homogenous switching shows selfrectifying effect with a good endurance. It may open up a simple route to suppress the sneak current in a p-oxide/noxide device while maintaining reasonable good resistive switching and self-rectifying properties. Graphical AbstractKeywords Resistive random access memory • Resistive switching • Self-rectifying • n-ZnO/p-NiO

Rectifying resistance-switching behaviour of Ag/SBTO/STMO/ $$\hbox {p}^{+}$$ p + -Si heterostructure films

“…As a result, it exhibits a counter-clockwise polarity. The switching mechanisms originating from oxygen vacancy were also observed in the Al/n-ZnO/p-NiO/ITO memory devices [18]. Figure 5 demonstrates the resistance evolution of the HRS and the LRS of Ag/SBTO/STMO/p + -Si device within 10 3 successive switching cycles.…”

Impact of substrate temperature on NiO thin films for resistive switching memory (ReRAM) memory devices

“…In order to address the reliability challenges of data-storing technologies, a novel idea based on NVM devices has been extensively investigated. These ideas have a focus on replacing traditional silicon (Si) based memory technology [2,3]. As a result, Si-based NVM devices have been dominated due to several limitations, including scalability issues, relatively slow operation speeds, and high voltages requirements for programming and erasing [4].…”

“…Nickel oxide (NiO) is a promising candidate with favorable properties for application in electronic devices. It offers significant advantages, such as nonvolatility, low power consumption, low cost, fast reaction times, high retention time, and endurance characteristics [3]. ReRAM is a type of memory device that relies on the switching of resistance to store and retrieve data.…”

Effect of Fatigue Fracture on Resistive Switching of ZnO and NiO Stacking Films

“…[ 6 ] The depletion layer existing at NiO and ZnO needs no serial selector and leads to good endurance and homogeneous switching. [ 7 ] Similarly, the trilayer structure of Al 2 O 3 /HfO 2 /Al 2 O 3 has two interfacial layers, which contributed to more excellent switching cycle performance than that of the HfO 2 /Al 2 O 3 . [ 8 ] It shows clearly that the stacking order of the junction may have a significant impact on improving the RS.…”