“…Generally, the strain gradient derives from thermal strain that is caused by temperature change, recovery of pre-stretched substrate, and lattice mismatch of epitaxial material. By tuning etching edges, nanomembrane systems, and deposition parameters, preparation of tubes 12 – 14 , helices 15 – 17 , buckles 18 , 19 , and other structures 20 – 22 have been achieved for applications in photodetectors 8 , 23 , field effect transistors 24 , 25 , and microrobots 13 , 26 . However, the formation of nanomembrane is affected by multiple complex factors in the release process, such as etching trajectory, balance between chemical reaction and etchant diffusion, fluid behaviors of etchant, aspect ratio, etc.…”