2023
DOI: 10.1149/2162-8777/acd959
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Self-Selective Dielectric-Fuse Effect with Ambient Factors in Oxide-Based Memory

Abstract: A dual-function memory with complementary metal oxide semiconductor (CMOS) compatibility is presented with the feasibility of future embedded applications. The self-selective memory composed of bilayer oxide stacks is presented with the immunity of sneak-path current and improved thermal stability for the high storage class memory array application. Meanwhile, the one-time programmable memory is realized by the identical bilayer structure which has improved the yield of dielectric-fuse phenomena by increasing … Show more

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