Self-standing nanoporous GaN membranes fabricated by UV-assisted electrochemical anodization

Xiao, Hongdi; Cui, Jishi; Cao, Dezhong; Gao, Qing; Liu, Jianqiang; Ma, Jin

doi:10.1016/j.matlet.2015.01.078

Cited by 18 publications

(7 citation statements)

References 13 publications

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“…be considered as a mapping of the electric field/carrier flow contours, so a higher applied bias reflects a higher carrier rate which leads to a higher etching rate [16]. to the relaxation of the compressive stress in the porous samples, which can be further confirmed by Raman scattering [17] and X-ray diffraction [18]. On the other hand, the PL intensity for the etched samples are found to be increased, which could mainly be attributed to the enhancement of the photon extraction efficiency due to more photons scattering from the sidewalls of the NP GaN [19].…”

Section: Characterization Of Np Gan Thin Filmsmentioning

confidence: 86%

Enhancing the photocatalytic activity of GaN by electrochemical etching

Cao

Xiao

et al. 2015

Materials Research Bulletin

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Section: Characterization Of Np Gan Thin Filmsmentioning

confidence: 86%

Enhancing the photocatalytic activity of GaN by electrochemical etching

Cao

Xiao

et al. 2015

Materials Research Bulletin

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“…These limitations have impeded the further production of GaN crystal membranes. Xiao et al synthesized self-standing nanoporous GaN membranes via electrochemical reaction and found the nanopore morphology is related to the n-doping concentration [ 94 ]. Yoo et al [ 95 ] fabricated a GaN LED on a polyamide substrate using a standard soft lithography technique.…”

Section: Synthesis Methods For (In)gan Nanostructuresmentioning

confidence: 99%

In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching

Soopy

Tang

et al. 2021

Nanomaterials

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This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.

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“…Lift-off on UV transparent substrates, such as sapphire can be achieved via laser lift-off, but chemical methods are required for lift-off from GaN substrates. Porous GaN membranes have been created through both ECE [120] and PECE [13]. This process etches from the surface of the sample to create pores through the structure and can be released by pushing the etching into the electropolishing regime by either increasing the etching potential (as in Procedure A) or the doping density, N D (as in Procedure B) as shown in figure 15.…”

Section: Mechanical Lift-offmentioning

confidence: 99%

“…These materials have allowed the blossoming of efficient LED lighting [1] and are transforming high power transistors [2]. Porous nitride semiconductors represent a new development that broadens the potential applications for the nitrides to include sensors [3,4], catalysis [5,6], and hybrid materials [7], as well as providing routes to improve the efficiency of more conventional nitride devices [8][9][10], improve material quality [11,12] and to create novel structures, such as membranes [13,14]. Etching nitride semiconductors via traditional wet-etching methods is notoriously difficult due to their chemical stability [15], meaning that techniques for creating new nano-and micro-structures are fairly limited.…”

Section: Introductionmentioning

confidence: 99%

Porous nitride semiconductors reviewed

Griffin

Oliver

2020

J. Phys. D: Appl. Phys.

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Porous nitride semiconductors are a fast-developing area of study, which open up a wide range of new properties and applications, including strain free optical reflectors, chemical sensors and as a pathway to device lift-off. This article reviews the current progress in porous nitrides formed through electrochemical and photoelectrochemical methods. Using a simple electrochemical cell, pores are formed by injecting holes into the surface layer in order to oxidise the material into a soluble form and releasing nitrogen gas. The process is controlled principally by the electric field that drives the injection of holes and hence the applied potential and doping density are the key parameters for controlling pore morphology, along with how and whether illumination is used. We describe the mechanisms responsible for this process in detail and outline the trends for changing pore size and pore shape. For example, larger applied potential creates a larger electric field and hence larger pores. These methods have been used to produce a wide variety of different structures. We present a layered porous structure created by the modulation of the applied potential. Alternatively, layered structures can be produced by growing alternate doped and non-intentionally doped layers. Electrochemical etching can then create pores only in the doped layers, as they are conductive. This process can be performed by etching laterally through access trenches that expose the doped material or through the etching of dislocations to create nanopipes that allow subsurface porosity to form. This process requires no prior processing steps. We combine this method with patterning of surface protective layers to influence where the resulting pores grow. Based on these various fabrication processes, significant progress has been made towards applications of porous GaN across optoelectronics, sensing and for improving material quality.

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Self-standing nanoporous GaN membranes fabricated by UV-assisted electrochemical anodization

Cited by 18 publications

References 13 publications

Enhancing the photocatalytic activity of GaN by electrochemical etching

Enhancing the photocatalytic activity of GaN by electrochemical etching

In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching

Porous nitride semiconductors reviewed

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