1997
DOI: 10.1016/s0030-4018(96)00758-4
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Self-starting passively mode-locked tunable femtosecond Cr4+:YAG laser using a saturable absorber mirror

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Cited by 30 publications
(3 citation statements)
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“…Recently, there have been substantial interests in passively mode-locked solid-state lasers with semiconductor saturable absorber mirrors (SESAMs). [1][2][3] Due to the successful development of SESAMs and saturable Bragg reflectors (SBRs), 1,2) the self-starting passive mode-locking of a variety of diode-pumped solid state lasers has been demonstrated. 4) The advantages of these semiconductor-based saturable absorbers are their low saturation energy, compact design and possibility of engineering the absorber for a particular laser systems, e.g., dispersion compensation.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, there have been substantial interests in passively mode-locked solid-state lasers with semiconductor saturable absorber mirrors (SESAMs). [1][2][3] Due to the successful development of SESAMs and saturable Bragg reflectors (SBRs), 1,2) the self-starting passive mode-locking of a variety of diode-pumped solid state lasers has been demonstrated. 4) The advantages of these semiconductor-based saturable absorbers are their low saturation energy, compact design and possibility of engineering the absorber for a particular laser systems, e.g., dispersion compensation.…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3] For high-peak-power applications, passively mode-locked lasers are generally more desirable than active ones because of their simpler cavity setup and shorter pulse width. Owing to the successful development of semiconductor saturable absorber mirrors ͑SESAMs͒ 4 and saturable Bragg reflectors ͑SBRs͒, 5,6 self-starting passive mode locking of a variety of diode-pumped solid-state lasers have been demonstrated. 7 The advantages of these semiconductor-based saturable absorbers are their low saturation energies, their compact design, and the possibility of engineering the absorber for particular laser systems, e.g., dispersion compensation.…”
Section: Introductionmentioning
confidence: 99%
“…8 Three strained InAlGaAs quantum wells with separated but sequential absorption peaks at adjacent wavelengths were deposited to extend the absorption linewidth. 2,9,10 The output power, pulse width, and repetition rate of the Ti:sapphire SBR laser at a pump power of 5 W ͑with an all-line largeframe argon-ion laser; Coherent Innova 400͒ are 250 mW, Ͻ100 fs, and 85 MHz, respectively. The Ti: sapphire rod and the SBR were both temperature regulated for control of the residual thermal fluctuation below 0.1°C.…”
Section: Introductionmentioning
confidence: 99%