SEM and XPS studies of nanohole arrays on InP(100) surfaces created by coupling AAO templates and low energy Ar+ ion sputtering

Robert-Goumet, Christine; Monier, Guillaume; Zefack, B.; Chelda, S.; Bideux, L.; Gruzza, B.; Awitor, Komla Oscar

doi:10.1016/j.susc.2009.07.006

Cited by 10 publications

(10 citation statements)

References 23 publications

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“…A peak appeared at 134.5 eV for S1, which originated from the oxidized state of P atoms. 12 This indicated the oxidization of InP substrate took place, which was consistent with XRR analysis. Al 2p peak located at 74.1 eV for S1 but it shifted down to 73.9eV for S2.…”

supporting

confidence: 81%

Al 2 O 3 / NbAlO / Al 2 O 3 sandwich gate dielectric film on InP

Cheng

Sun

et al. 2010

Applied Physics Letters

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Al 2 O 3 / NbAlO / Al 2 O 3 sandwich dielectric films were grown on InP substrate and annealed. X-ray reflectivity measurements suggested that 1.0 nm interfacial layer existed at InP interface, x-ray diffraction and high resolution transmission electron microscopy indicated the films were crystallized. X-ray photoelectron spectra indicated the oxidization of InP substrate, and the valence-band offset between the dielectric film and InP interface was calculated to be 3.1 eV. The electrical measurements indicated that the leakage current density was 40 mA/cm2 at gate bias of 1 V, and the equivalent oxide thickness and the dielectric constant were 1.7 and 20 nm, respectively.

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supporting

confidence: 81%

Al 2 O 3 / NbAlO / Al 2 O 3 sandwich gate dielectric film on InP

Cheng

Sun

et al. 2010

Applied Physics Letters

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“…37 − 40 For our In 4d measurements shown in Figure 4 a–c(ii), we observe a small component (orange) shifted to 0.6 eV higher binding energy than the bulk component (blue), which may arise from an oxide component. 41 − 43 However, we can also see an additional component at 0.75 eV lower binding energy in the In 4d spectra (red), principally on the upper end of the nanowire (n-doped region). This may indicate the presence of metallic In or some In/Au alloy species 43 either arising from the In enriched Au particle at the top of the nanowire 25 or some alloying of the In of the NW with the Au-covered electrodes.…”

mentioning

confidence: 95%

Operando Surface Characterization of InP Nanowire p–n Junctions

et al. 2019

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We present an in-depth analysis of the surface band alignment and local potential distribution of InP nanowires containing a p–n junction using scanning probe and photoelectron microscopy techniques. The depletion region is localized to a 15 nm thin surface region by scanning tunneling spectroscopy and an electronic shift of up to 0.5 eV between the n- and p-doped nanowire segments was observed and confirmed by Kelvin probe force microscopy. Scanning photoelectron microscopy then allowed us to measure the intrinsic chemical shift of the In 3d, In 4d, and P 2p core level spectra along the nanowire and the effect of operating the nanowire diode in forward and reverse bias on these shifts. Thanks to the high-resolution techniques utilized, we observe fluctuations in the potential and chemical energy of the surface along the nanowire in great detail, exposing the sensitive nature of nanodevices to small scale structural variations.

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Section: Preparation Of Aao Support and Nio-ceo2/aao Catalystmentioning

confidence: 99%

“…Porous AAO was used as the catalyst support; it was prepared by anodization of aluminum sheet using aqueous oxalic acid solution [50][51][52][53]. Briefly, a high purity aluminum foil was anodized in the oxalic acid solution of 0.3 M at 40 V for 24 h at a temperature of 10 • C to form a porous γ-Al 2 O 3 layer, and then, pore widening treatment was performed with the same aqueous oxalic acid solution mentioned above for 4 h at 30 • C. When the pore widening treatment was finished, it was immersed in deionized water for sufficient time to wash out the residual oxalic acid.…”

Section: Preparation Of Aao Support and Nio-ceo 2 /Aao Catalystmentioning

confidence: 99%

Anodized Aluminum Oxide Supported NiO-CeO2 Catalyst for Dry Reforming of Propane

2016

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Nano-porous anodic aluminum oxide (AAO) supported Ni-Ce mixed metal oxide catalysts were prepared and tested for dry reforming of propane to produce synthesis gas. The presence of Ce efficiently suppressed the nickel particle sintering and improved the reducibility of nickel oxide supported on the AAO. The prepared NiO-CeO 2 /AAO catalyst was highly efficient for the dry reforming of propane (DRP) with CO 2 over a temperature range of 480-580 • C. The catalyst achieved the best reforming performance of 90%-97%, and a H 2 /CO ratio close to 1.37 at 580 • C. The AAO supported NiO-CeO 2 catalyst can be a promising catalytic system for DRP.

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SEM and XPS studies of nanohole arrays on InP(100) surfaces created by coupling AAO templates and low energy Ar+ ion sputtering

Cited by 10 publications

References 23 publications

Al 2 O 3 / NbAlO / Al 2 O 3 sandwich gate dielectric film on InP

Al 2 O 3 / NbAlO / Al 2 O 3 sandwich gate dielectric film on InP

Operando Surface Characterization of InP Nanowire p–n Junctions

Anodized Aluminum Oxide Supported NiO-CeO2 Catalyst for Dry Reforming of Propane

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