2008
DOI: 10.1002/sca.20115
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SEM characterization of silicon nanostructures: can we meet the challenge?

Abstract: The current semiconductor technology road map for device scaling champions a 4.5 nm gate length in production by 2022. The scanning electron microscope (SEM) as applied to critical dimensions (CD) metrology and associated characterization modes such as electron beam-induced current and cathodoluminescence (CL) has proved to be a workhorse for the semiconductor industry during the microelectronics era. We review some of the challenges facing these techniques in light of the silicon nanotechnology road map. We p… Show more

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Cited by 5 publications
(1 citation statement)
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“…The nanopillars were etched and studied using different plasma chemistries. A scanning electron microscope (SEM) was used to inspect the resulting nanopillars profiles and correlate to the ICP‐DRIE plasma state . Various microscale and nanoscale features were exposed under plasma etching chemistries and examined, using both Bosch and pseudo‐Bosch processes.…”
Section: Methodsmentioning
confidence: 99%
“…The nanopillars were etched and studied using different plasma chemistries. A scanning electron microscope (SEM) was used to inspect the resulting nanopillars profiles and correlate to the ICP‐DRIE plasma state . Various microscale and nanoscale features were exposed under plasma etching chemistries and examined, using both Bosch and pseudo‐Bosch processes.…”
Section: Methodsmentioning
confidence: 99%