2015
DOI: 10.1016/j.phpro.2015.12.049
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Semi-Epitaxial SmB6 Thin Films Prepared by the Molecular Beam Epitaxy

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Cited by 9 publications
(5 citation statements)
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“…We note that thin films of SmB 6 have already been grown via molecular beam epitaxy (MBE) 107 and Kondo superlattices of other compounds have been grown via MBE for study of quantum criticality 108 . Furthermore, evaporation of boron and most rare-earth lanthanides is possible at operating temperatures for effusion cells 109 .…”
Section: Discussionmentioning
confidence: 99%
“…We note that thin films of SmB 6 have already been grown via molecular beam epitaxy (MBE) 107 and Kondo superlattices of other compounds have been grown via MBE for study of quantum criticality 108 . Furthermore, evaporation of boron and most rare-earth lanthanides is possible at operating temperatures for effusion cells 109 .…”
Section: Discussionmentioning
confidence: 99%
“…PLD is another PVD technique, where high power laser light is used to vaporise material from the top surface of a stoichiometric target within a very short period of time, which then gets deposited on a substrate. Due [74] Sapphire dc MS Polycrystalline UPd 2 Al 3 [75] Al 2 O 3 (random, a-plane, r-plane), LaAlO * 3 (111) MBE (0001) oriented CeNi 2 Ge 2 [76] W( 110) MBE (001) oriented CeCu 6 [77] S i 3 N 4 (b)/Si(100) dc MS Polycrystalline UNi 2 Al 3 [78] Y A l O 3 (010), YAlO 3 (112) MBE (001) oriented with impurity phase CeCoIn 5 [79] A l 2 O 3 (a-plane, r-plane) MBE (001) oriented with impurity phase CeCoIn 5 [80] Cr(001) (b)/MgO(001) MBE (001) oriented CeCoIn 5 [81] A l 2 O 3 (r-plane), Cr(001)(b)/MgO(001) dc MS + thermal evaporation (001) oriented CeCoIn 5 [82] C e I n 3 (b)/MgF 2 (001) MBE Epitaxial CeCoIn 5 [83] A l 2 O 3 (0001) PLD Polycrystalline CeIn 3 [84] M g F 2 MBE Epitaxial CeRhIn 5 [85] C e I n 3 (b)/MgF 2 (001) MBE Epitaxial CeCu 2 Ge 2 [86] MgO(001) MBE Epitaxial CeFe 2 Ge 2 [86] MgO(001) MBE Epitaxial SmB 6 [87] Si(001) dc MS Polycrystalline SmB 6 [88] MgO(001) PLD Polycrystalline SmB 6 [89] MgO(001) MBE (001) oriented YbAl 3 [90] L u A l 3 (b)/Al(b)/MgO(001) MBE Epitaxial SmO [91] Y A l O 3 (110) MBE Epitaxial YbRh 2 Si 2 [92] Ge(001) MBE Epitaxial Ce [93] Graphene on 6H-SiC (0001) MBE Epitaxial a (b) indicates buffer layer, * indicates the substrate for which the best quality thin film was obtained.…”
Section: Pulsed Laser Depositionmentioning
confidence: 99%
“…A similar approach was used in 2017 by Petrushevsky et al [88]. Growth attempts using pulsed laser deposition, molecular beam epitaxy or sputtering using a single target often result in thin films with substantial boron deficiency [87,89,90]. Batkova et al, however, have recently reported the preparation of stoichiometric SmB 6 thin films via pulsed laser deposition [91].…”
Section: Thin Films and Nanowiresmentioning
confidence: 99%