1989
DOI: 10.1557/proc-149-429
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Semi-Transparent Amorphous Silicon Solar Cells

Abstract: We report on the development of the first large area semi-transparent amorphous silicon solar modules on pre-shaped compound curved substrates. To date, we have achieved an active area (approximately 1800 cm2) efficiency of about 7%. It is shown that, because of enhanced internal reflection, a metal/dielectric back contact is a good alternative to one consisting of merely a transparent conducting oxide (TCO). The dielectric serves as both a passivating layer and an anti-reflection coating.

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Cited by 5 publications
(3 citation statements)
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“…Although TCOs are generally attractive as the semitransparent electrode at the laboratory level, they would add immensely to the production cost, particularly for vacuum‐deposited ones. [ 169 ] However, some promising results have been reported with amorphous TCO electrodes. Lim et al.…”
Section: Device Engineering In Stpvsmentioning
confidence: 99%
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“…Although TCOs are generally attractive as the semitransparent electrode at the laboratory level, they would add immensely to the production cost, particularly for vacuum‐deposited ones. [ 169 ] However, some promising results have been reported with amorphous TCO electrodes. Lim et al.…”
Section: Device Engineering In Stpvsmentioning
confidence: 99%
“…[167,168] Although TCOs are generally attractive as the semitransparent electrode at the laboratory level, they would add immensely to the production cost, particularly for vacuum-deposited ones. [169] However, some promising results have been reported with amorphous TCO electrodes. Lim et al [111] reported a roomtemperature processed amorphous InGaTiO (IGTO) electrode prepared by modified sputtering geometry (linear facing target sputtering).…”
Section: Transparent Conductive Oxidesmentioning
confidence: 99%
“…The low-temperature processing and flexibility in device structure of a-Si:H has provided significant commercial interest for BIPV applications [24,59,60]. Early advances in these technologies showed that by employing TCO's as bottom and top electrodes (particularly doped ZnO and SnO 2 varieties), semi-transparency could be achieved by structuring microholes within the a-Si:H absorber layers or thinning the absorber layers to <100 nm [61][62][63][64]. These semi-transparent a-Si:H devices possessed efficiencies of ~6% with 25% average visible transmission (AVT) in the late 1980's.…”
Section: Amorphous Silicon (A-si)mentioning
confidence: 99%