Semi-transparent silicon-rich silicon carbide photovoltaic solar cells

Cheng, Chih-Hsien; Chang, Jow‐Ran; Wu, Chih-I; Lin, Gong‐Ru

doi:10.1039/c4ra16998k

Cited by 10 publications

(5 citation statements)

References 30 publications

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“…3 Introducing nitrogen impurities has been adapted as one of the most frequent strategies to improve the electrical conductivity of SiC. 6 Therefore, we propose a new type of photovoltaic material based on ternary silicon carbonitride (SiCN) thin films, where effective nitrogenation of SiC films is achieved in one single layer. Previously, we showed that the brittleness of SiC was improved by the addition of nitrogen.…”

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confidence: 99%

“…11,12 In addition to bandgap widening, the hydrogenated amorphous structure of SiCN alleviates concerns about the expensive fabrication of crystalline cubic SiC 12,13 or increased power consumption to form nanocrystalline silicon quantum dots (QDs) requiring high annealing temperatures. 14,15 We employed electron cyclotron resonance chemical vapour deposition (ECR PECVD) allowing hydrogen incorporation without the need for high temperature and high RF power, 6 which is a problem in some fabrication methods. Another interesting feature of the SiCN-based matrix is the broad range of stoichiometries allowing to tune the light emission properties through careful design of the composition of this ternary structure.…”

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confidence: 99%

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X-ray Absorption Spectroscopy of Silicon Carbide Thin Films Improved by Nitrogen for All-Silicon Solar Cells

Khatami

Bleczewski

Neville

et al. 2020

ECS J. Solid State Sci. Technol.

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Synchrotron-based experiments in combination with optical measurements were used to explore the potential of a photovoltaic material based on silicon carbonitride (SiCN) thin films, in particular for the use in space solar cells. The large bandgap, SiCN films were fabricated using electron cyclotron resonance plasma-enhanced chemical vapour deposition (ECR-PECVD) followed by low-temperature annealing processes. X-ray absorption near edge structure (XANES) with excitations at the carbon, nitrogen, and silicon K-edges verifies that the presence of nitrogen tends to disrupt Si–C networks. This results in the enhancement of light absorption and bandgap widening, which is desirable for front emitters in all-silicon tandem solar cells. The ternary structure of SiCN allows bandgap engineering and tuning of the light absorption and refractive index through careful design of the composition. XANES showed that the thermal annealing at a medium temperature (500 °C) using N2 ambient promoted the formation of Si–Si and C–N sp2 bonds before disappearing in higher annealing temperatures. In our opinion unlocking the potential of robust SiC mixed with nitrogen in SiCN matrix has appeal in radiation-resistant solar cells, where it can serve as the top emitter layer in all-silicon tandem solar cells and at the same time benefits the antireflection properties.

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confidence: 99%

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confidence: 99%

X-ray Absorption Spectroscopy of Silicon Carbide Thin Films Improved by Nitrogen for All-Silicon Solar Cells

Khatami

Bleczewski

Neville

et al. 2020

ECS J. Solid State Sci. Technol.

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“…The XPS detected energy of Si 2p orbital electron can be affected by the Si-Si, Si-C, C-Si-O and Si-O with different binding energies of 99.5-99.8 eV, 100.3-100.5 eV, 101.7 eV, and 103.5 eV, respectively. [20][21][22][23] As shown in Fig. 4(a)-(c), the XPS spectra of electron energy distribution at Si 2p core levels are appropriately tted by four Gaussian lines to analyze different binding components including Si-Si, Si-C, C-Si-O and Si-O bonds.…”

Section: Resultsmentioning

confidence: 99%

Nearly warm white-light emission of silicon-rich amorphous silicon carbide

et al. 2015

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“…[14][15][16][17] It has been shown that the conversion efficiency of the nonstoichiometric S x iC 1-x -based p-n junction can be improved by varying the reactant fluence ratio (R) in plasma-enhanced chemical vapor deposition (PECVD). During PECVD "R" can be defined as: [18,19]…”

Section: Introductionmentioning

confidence: 99%

Tailoring Electronic Properties of 6H‐SiC with Different Composition of Silicon by First‐Principles Calculations

Sharif,

Yang,

Zhang

et al. 2024

Advcd Theory and Sims

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Silicon carbide (SiC) is used in a variety of applications including photovoltaic due to its high stability. The wide bandgap of SiC limits these applications and necessitates bandgap tuning toward lower energy for efficient solar absorption. In this regard, the electronic properties of highly stable SiC polytype 6H‐SiC are studied by first‐principles calculations. By varying the Si composition of 6H‐SiC the electronic properties are tailored. The calculated results show that increasing the Si composition of 6H‐SiC from 50% to 66.66% reduces the bandgap from 2.98 to 1.54 eV. It is observed that this reduction in bandgap occurs due to the addition of extra Si s/p orbitals which close the conduction band and valance band. From the electronic conductivity calculations, it is found that with increasing Si composition of 6H‐SiC the conductivity is improved due to higher hole density which can be verified by the spectrum peaks shifted toward near‐infrared and visible region.

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Semi-transparent silicon-rich silicon carbide photovoltaic solar cells

Abstract: Si-rich SixC1−x films grown at different RSiC fluence ratios were applied as an i-SixC1−x absorbing layer in all Si-rich SixC1−x-based PVSCs.

Cited by 10 publications

References 30 publications

X-ray Absorption Spectroscopy of Silicon Carbide Thin Films Improved by Nitrogen for All-Silicon Solar Cells

X-ray Absorption Spectroscopy of Silicon Carbide Thin Films Improved by Nitrogen for All-Silicon Solar Cells

Nearly warm white-light emission of silicon-rich amorphous silicon carbide

Tailoring Electronic Properties of 6H‐SiC with Different Composition of Silicon by First‐Principles Calculations

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