2014
DOI: 10.1016/j.matlet.2014.08.028
|View full text |Cite
|
Sign up to set email alerts
|

Semiconducting behavior of bilayer graphene synthesized by plasma-enhanced chemical vapor deposition and its application in field effect transistors

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

1
2
0

Year Published

2017
2017
2024
2024

Publication Types

Select...
4
1

Relationship

0
5

Authors

Journals

citations
Cited by 5 publications
(3 citation statements)
references
References 26 publications
1
2
0
Order By: Relevance
“…In this work, the activation energy of the bilayer graphene is much lower compared with that of bilayer graphene grown via a PECVD method because of the inclusion of low density of defects in its atomic structure. 45 This observation suggests that a band-like transport dominates the carrier transport in the bilayer graphene, which is further confirmed by a trend of decrease in carrier mobility with increasing temperature (see Figure 4c). Further electrical characterization was performed on a 1.0 cm × 1.0 cm sample size using a typical van der Pauw method under ambient air at 300 K by a Hall effect measurement system.…”
Section: Resultssupporting
confidence: 61%
See 1 more Smart Citation
“…In this work, the activation energy of the bilayer graphene is much lower compared with that of bilayer graphene grown via a PECVD method because of the inclusion of low density of defects in its atomic structure. 45 This observation suggests that a band-like transport dominates the carrier transport in the bilayer graphene, which is further confirmed by a trend of decrease in carrier mobility with increasing temperature (see Figure 4c). Further electrical characterization was performed on a 1.0 cm × 1.0 cm sample size using a typical van der Pauw method under ambient air at 300 K by a Hall effect measurement system.…”
Section: Resultssupporting
confidence: 61%
“…The linear plot at a high-temperature regime, ranging from 250 to 350 K, indicates that thermally activated conduction with an estimated E a of 27.2 meV occurs in the bilayer graphene. In this work, the activation energy of the bilayer graphene is much lower compared with that of bilayer graphene grown via a PECVD method because of the inclusion of low density of defects in its atomic structure . This observation suggests that a band-like transport dominates the carrier transport in the bilayer graphene, which is further confirmed by a trend of decrease in carrier mobility with increasing temperature (see Figure c).…”
Section: Resultsmentioning
confidence: 48%
“…68 a Schematics of exposure of monolayer graphene suspended on a 5-lm-diameter hole to O 2 plasma and water transport measurements (PG: porous graphene). b Water/salt selectivity as a function of I D /I G ratio showing exceptionally high selectivity for a shorter plasma exposure time (Surwade et al 2015) controlling the defect density and the nano-crystalline size in the process of its PECVD synthesis (Zhao et al 2014). In the second case, a high-density array of nanoscale holes was punched into the monolayer or few-layer graphene as illustrated in Fig.…”
Section: Functionalization Of Graphene By Plasma Engineeringmentioning
confidence: 99%