Semiconducting Compounds of the AII BV Group

Żdanowicz, W.; Żdanowicz, L.

doi:10.1146/annurev.ms.05.080175.001505

Cited by 127 publications

(64 citation statements)

References 63 publications

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“…2, along with their sheet carrier densities. All films show n-type conductivity, with room temperature carrier mobilities increasing with substrate temperature from ∼550 cm 2 /V s to 19 300 cm 2 /V s. The latter are comparable to room temperature single crystal values 26 and higher than those for thin films reported in the literature, which were in the range of 2000 cm 2 /V s-11 000 cm 2 /V s. 13,17,18,27 The GaSb films exhibited sheet resistances that were at least three orders of magnitude higher than those of the Cd 3 As 2 films, APL Mater. ensuring that the measurements were dominated by the properties of the Cd 3 As 2 films.…”

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confidence: 52%

Molecular beam epitaxy of Cd3As2 on a III-V substrate

et al. 2016

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Epitaxial, strain-engineered Dirac semimetal heterostructures promise tuning of the unique properties of these materials. In this study, we investigate the growth of thin films of the recently discovered Dirac semimetal Cd3As2 by molecular beam epitaxy. We show that epitaxial Cd3As2 layers can be grown at low temperatures (110 °C–220 °C), in situ, on (111) GaSb buffer layers deposited on (111) GaAs substrates. The orientation relationship is described by (112)Cd3As2 || (111) GaSb and [11¯0]Cd3As2 || [1¯01]GaSb. The films are shown to grow in the low-temperature, vacancy ordered, tetragonal Dirac semimetal phase. They exhibit high room temperature mobilities of up to 19300 cm2/Vs, despite a three-dimensional surface morphology indicative of island growth and the presence of twin variants. The results indicate that epitaxial growth on more closely lattice matched buffer layers, such as InGaSb or InAlSb, which allow for imposing different degrees of epitaxial coherency strains, should be possible.

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confidence: 52%

Molecular beam epitaxy of Cd3As2 on a III-V substrate

et al. 2016

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“…[11][12][13][14] Although the electrical, thermal and optical properties of Cd 3 As 2 have been widely investigated, hampered by the complicated crystal structure its band structure remains a matter of controversy. 14,15 Recently, first-principle calculations have revealed the nature of 3D topological Dirac semimetal state in Cd 3 As 2 . 2,7,8 Soon after the prediction, its inverted band structure with the presence of Dirac fermions was experimentally confirmed.…”

Section: Introductionmentioning

confidence: 99%

“…[24][25][26] However, despite the extensive studies in the past, synthetized Cd 3 As 2 always exhibits n-type conductivity with a high electron concentration, therefore calling for a well-controlled growth scheme and the tunability of carrier density. 14,27 Theory proposed that the chiral anomaly in TDSs can induce nonlocal transport, especially with a large Fermi velocity when the Fermi level, E F , is close to the Dirac nodes. 28 Hence, the ability to modulate the carrier density and E F in Cd 3 As 2 has a vital role for the study of the transport behavior and TDS-related phase transitions.…”

Section: Introductionmentioning

confidence: 99%

Gate-tunable quantum oscillations in ambipolar Cd3As2 thin films

et al. 2015

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Electrostatic doping in materials can lead to various exciting electronic properties, such as metal-insulator transition and superconductivity, by altering the Fermi level position or introducing exotic phases. Cd 3 As 2 , a three-dimensional (3D) analog of graphene with extraordinary carrier mobility, was predicted to be a 3D Dirac semimetal, a feature confirmed by recent experiments. However, most research so far has been focused on metallic bulk materials that are known to possess ultra-high mobility and giant magneto-resistance but limited carrier transport tunability. Here we report on the first observation of a gate-induced transition from band conduction to hopping conduction in single-crystalline Cd 3 As 2 thin films via electrostatic doping by solid electrolyte gating. The extreme charge doping enables the unexpected observation of p-type conductivity in a ∼50-nm-thick Cd 3 As 2 thin film grown by molecular beam epitaxy. More importantly, the gate-tunable Shubnikov-de Haas oscillations and the temperature-dependent resistance reveal a unique band structure and bandgap opening when the dimensionality of Cd 3 As 2 is reduced. This is also confirmed by our first-principle calculations. The present results offer new insights toward nanoelectronic and optoelectronic applications of Dirac semimetals in general and provide new routes in the search for the intriguing quantum spin Hall effect in low-dimension Dirac semimetals, an effect that is theoretically predicted but not yet experimentally realized.

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“…[1][2][3] Meanwhile, with an excitonic radius of 18 nm, bandgap-engineered Cd 3 P 2 nanoparticles should have potential in many areas such as optoelectronics. The colloidal photoluminescent (PL) Cd 3 P 2 nanoparticles that have been reported so far are broad in size distribution.…”

Section: Introductionmentioning

confidence: 99%

Magic-Sized Cd₃P₂ II−V Nanoparticles Exhibiting Bandgap Photoemission

Wang

Ratcliffe

et al. 2009

J. Phys. Chem. C

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Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Questions? Contact the NRC Publications Archive team atPublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://doi.org/10.1021/jp907642bAccess and use of this website and the material on it are subject to the Terms and Conditions set forth at NRC Publications Record / Notice d'Archives des publications de CNRC:http://nparc.cisti-icist.nrc-cnrc.gc.ca/eng/view/object/?id=644c4ab4-27e5-4c4e-9f8f-611f553cffde http://nparc.cisti-icist.nrc-cnrc.gc.ca/fra/voir/objet/?id=644c4ab4-27e5-4c4e-9f8f-611f553cffde Canada, Ottawa, Ontario K1A 0R6, Canada ReceiVed: August 7, 2009; ReVised Manuscript ReceiVed: September 9, 2009 The very first single-sized Cd 3 P 2 II-V nanoparticles were synthesized via a non-injection-based approach which was designed to be thermodynamically driven. The Cd 3 P 2 nanoparticles were synthesized in a pure form and exhibited bright bandgap photoemission peaking at 455 nm with a full width at half-maximum (fwhm) of only 17 nm and narrow bandgap absorption peaking at 451 nm. Compared to those reported before with a fwhm of 50-150 nm, the newly developed Cd 3 P 2 nanoparticles represent significant progress in synthesis with better design and control. Cadmium acetate dihydrate (Cd(OAc) 2 · 2H 2 O) and tris(trimethylsilyl)phosphine ((TMS) 3 P) were used as Cd and P source compounds, respectively; the synthesis was carried out in 1-octadecene (ODE), a noncoordinating solvent. The novel Cd 3 P 2 nanoparticles were further characterized by transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDX), powder X-ray diffraction (PXRD), and 113 Cd and 31 P solid-state NMR. These single-sized Cd 3 P 2 nanoparticles are the first example of class II-V magic-sized nanoparticles (MSNs). Magic-Sized Cd 3 P 2 II-V Nanoparticles Exhibiting Bandgap Photoemission

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Semiconducting Compounds of the AII BV Group

Cited by 127 publications

References 63 publications

Molecular beam epitaxy of Cd3As2 on a III-V substrate

Molecular beam epitaxy of Cd3As2 on a III-V substrate

Gate-tunable quantum oscillations in ambipolar Cd3As2 thin films

Magic-Sized Cd₃P₂ II−V Nanoparticles Exhibiting Bandgap Photoemission

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Semiconducting Compounds of the AII BV Group

Cited by 127 publications

References 63 publications

Molecular beam epitaxy of Cd3As2 on a III-V substrate

Molecular beam epitaxy of Cd3As2 on a III-V substrate

Gate-tunable quantum oscillations in ambipolar Cd3As2 thin films

Magic-Sized Cd3P2 II−V Nanoparticles Exhibiting Bandgap Photoemission

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Product

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Magic-Sized Cd₃P₂ II−V Nanoparticles Exhibiting Bandgap Photoemission