Semiconducting nature and thermal transport studies of ZrTe3

Abstract

We report electrical and thermal transport properties of polycrystalline ZrTe3. The polycrystalline sample shows semiconducting behavior in contrast to the established semi-metallic character of the compound. However the charge density wave (CDW) transition remains intact and its clear signatures are observed in thermal conductivity and Seebeck coefficient, in the wide temperature range 50 -100 K. The thermal conductivity points to additional scattering from the low frequency phonons (phonon softening) in the vicinity of CDW transition. The transport in the polycrystalline compounds is governed by smaller size polarons in the variable range hopping (VRH) region. However, the increasing disorder in polycrystalline compounds suppresses the CDW transition. The VRH behavior is also observed in the Seebeck coefficient data in the similar temperature range. The Seebeck coefficient suggests a competition between the charge carriers (electrons and hole).

Evaluating the Electrical Characteristics of Quasi-One-Dimensional ZrTe3 Nanoribbon Interconnects

“…As shown in Figure g, the temperature dependence of the resistivity exhibits a steady increase in resistivity with increasing temperature, thus verifying the metallic behavior and its suitability for potential interconnect application of CVT-synthesized and exfoliated ZrTe 3 nanoribbons, although semiconducting ZrTe 3 has ever been reported . We also note that the sharp drop in resistivity of ∼2 K (inset in the Figure g) observed can be reasonably attributed to the superconducting transition of ZrTe 3 . ,, Overall, high-quality metallic ZrTe 3 nanoribbons can be feasibly obtained with the CVT-synthesis and exfoliation process, which provides a strong basis for the following electrical evaluation of its applications as potential interconnects.…”

“…23 We also note that the sharp drop in resistivity of ∼2 K (inset in the Figure 1g) observed can be reasonably attributed to the superconducting transition of ZrTe 3 . 21,22,33 Overall, high-quality metallic ZrTe 3 nanoribbons can be feasibly obtained with the CVT-synthesis and exfoliation process, which provides a strong basis for the following electrical evaluation of its applications as potential interconnects.…”

“…For example, an abnormal charge density wave (CDW) transition in resistivity at ∼63 K − and a superconducting (SC) transition at ∼2 K , have been experimentally verified for bulk ZrTe 3 crystals. It also exhibits low resistivity, high breakdown current density, and good low-frequency noise characteristics. , However, a disparity in either semiconducting or metallic transport properties has been demonstrated previously, ,, implying that a profound investigation is virtually demanded. Moreover, its derivatives including ZrTe 2 , which shows the giant magnetoresistance phenomenon, and ZrTe 5 , which exhibits the chiral magnetic effect, topological quantum phase transition, and anomalous Hall effect, have already been demonstrated.…”

Thermal conductivity of the quasi-1D materials TaSe3 and ZrTe3

“…While the electronic structure and the electronic transport properties of quasi-1D materials have been exten-sively studied, their phononic and thermal transport properties have received less attention. Recently, a thermal conductivity of 7 Wm −1 K −1 was measured in bulk polycrystalline ZrTe 3 [57]. A DFT investigation of monolayer ZrSe 3 found room temperature thermal conductivities parallel to the chain direction of 8 Wm −1 K −1 and perpendicular to the chain direction of 3 Wm −1 K −1 [56].…”

Metallic Transport in Chemical Vapor Deposition ZrTe3 Nanoribbons on a SiO2 Wafer Substrate

“…The 1D and quasi-1D vdW materials have long been studied for the charge density waves they support. − Recently, increased interest has been attracted by them, and a multitude of MX 3...5 (M: transition metal such as Ta, Zr, ,− and Nb; , X chalcogen: S, Se, and Te) have been synthesized for electronic, ,− magnetic, ,, superconducting, ,,,,,, and optical , characterization. In this study, we build on our prior work on TaSe 3 CVD and develop a tailored technique to provide access to ZrTe 3 on SiO 2 substratessimple transference of the growth technique developed for TaSe 3 does not lead to ZrTe 3 growth.…”