Semiconducting properties and band structure of MoTe2 single crystals

Growth of textured nonstoichiometric MoTe2 films from Mo/Te layers and their use as precursor in the synthesis of MoTe2−xSx films

“…This is in good agreement with the literature [21]. The conductivity (s) of MoTe 2 films at room temperature is 0.164 U K1 cm K1 and is of the same order as that of the single crystals (sZ0.16 U K1 cm K1 ) [30] and on the films (sZ0.125K0.338 U K1 cm K1 ). It should be noted that, whatever the MoTe 2 thin film studied, similar high conductivity is measured.…”

“…X-ray diffraction studies also make it clear that MoTe 2 films like 2H-MoS 2 can be easily cleaved in the direction parallel to the van-der Waals planes. The measured value of 13.88 Å matched well with those13.96 Å for single crystals [17] and 13.964 Å [20] on thin films and from the literature [26].…”

“…However, work on MoTe 2 have not been extensively investigated and the work have been mostly confined to the electrical properties of polycrystalline materials prepared by direct synthesis [16] as well as for single crystals [17,18]. In case of single crystals, use of tellurium as flux results in a p-type MoTe 2 while vapour transport method using bromine as a transporting agent led to the n-type MoTe 2 crystals [18].…”

Valence-band structure ofα−MoTe2by angular-resolved photoelectron spectroscopy in the constant-final-state mode

“…We used bromine as the transport agent and therefore the semiconducting character is of n type. 9 Coarse orientation of the samples was achieved by Laue and by low-energy electron diffraction ͑LEED͒ patterns. In Fig.…”

Transport Property Measurements in Doped Bi2Te3 Single Crystals Obtained via Zone Melting Method

“…However, if acoustic or optical phonons dominate the scattering mechanism, the mobility of charge carriers shows a T Às dependence with s = À(1/2) for acoustic phonons and s = (1/2) for optical phonons. 27 The mobility measurements in the temperature range from 308 K to 473 K indicate that the scattering of electrons in Bi 2 Te 3Àx Se x is controlled by the defect concentration and doping for Bi 2Ày Fe y Te 3 ; 14 the scattering parameter s assumes a value of 1.5. Using this value of s in Eq.…”