Semiconducting properties of Mg2Si single crystals

Morris, Robert G.

doi:10.31274/rtd-180816-3350

Cited by 4 publications

(4 citation statements)

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“…Morris (4) and Redin (2) in their work at Iowa State University found that an excess of silicon or an excess of germanium in an ingot does not affect the electrical properties of the Mg2Si or the Mg2Ge taken from the ingot. Morris in his work on single crystals of Mg2Si took his single crystals from ingots containing large amounts of excess silicon.…”

Section: Thermoelectric Figure Of Meritmentioning

confidence: 99%

The Thermoelectric Properties of Mixed Crystals of Mg[sub 2]Ge[sub x]Si[sub 1−x]

LaBotz

Mason²,

O'Kane

1963

J. Electrochem. Soc.

167

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The purpose of this work was to determine the thermoelectric properties of the pseudobinary system MgfSi-MgfGe. The compositions investigated were Mg2Si, Mg2Ge0.fSi0.s, MgaGe0.4Si0.6, Mg2Ge0.6Si0.4, Mg2Ge0.8Si0.2, and Mg2Ge. X-ray diffraction lattice parameter measurements and differential thermal analysis measurements established the existence of complete solid solubility between Mg~Si and Mg2Ge. Both the lattice parameter and liquidus temperature show almost linear variation with composition in this system. The melting temperature of MgfSi was found to be 1070" ___ 5"C, while that of MgfGe was found to be 1102" _ 5~Electrical resistivity and Hall effect measurements indicated that at 300*K the electron Hall mobility in the mixed crystals is essentially the same as that of the pure compounds. Maximum values obtained were slightly above 300 cm2/volt sec. The forbidden energy gap appeared to vary monotonically from about 0.78 electronvolt (ev) for MgfSi to about 0.70 ev for MgfGe. Thermal conductivity measurements on the pseudobinary system showed that the lattice thermal conductivity of the solid solutions is substantially lower than that of either of the pure compounds at 300~ At this temperature the lattice thermal conductivity of Mg2Ge0.6Sio.4 was found to be 0.0268 watt/cm *K. The maximum thermoelectric figure of merit which could be obtained with these materials is not as good as that of other materials now in use.

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Section: Thermoelectric Figure Of Meritmentioning

confidence: 99%

The Thermoelectric Properties of Mixed Crystals of Mg[sub 2]Ge[sub x]Si[sub 1−x]

LaBotz

Mason²,

O'Kane

1963

J. Electrochem. Soc.

167

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“…Mg2Sioriented thermoelectric materials are promising within 500 to 900 K. This is because of immense attainment in the values of ZT to 1.3 [25,26,27]. Because of the extreme closeness in the boiling value of magnesium and the melting value of Mg2Si, treatment of Mg2Si is not easy [28]. Method like spark plasma and ball-milling are therefore employed to synthesize Mg2Si.…”

Section: Thermoelectric Materials (Mg2si)mentioning

confidence: 99%

A review on Silicide based materials for thermoelectric applications

Singh¹,

Sharma²

2021

IJAERS

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Thermoelectric materials are considered prime in converting energy, thanks to its nature to translate heat into electricity openly. Low efficiency and the intricacy in fabrication restrict their applications commercially. Moreover, there are certain thermoelectric materials such as alloys of telluride owing to their toxicity present peril to the environment. There is scarcity in present examination to get an ecological gracious thermoelectric material which is available in abundance to be utilized in large volumes owing to the low efficiency. The paper presents a review of such thermoelectric material which is ecological gracious. In the beginning, a number of techniques employed in advancing the figure of merit (ZT) is offered, then an indepth review of several thermoelectric materials which are siliconbased is showed. N-type doping of Mg2Si0.75Sn0.25 among aluminum along with lead at operational temperature of 850 K scaled up the value of ZT by a factor of 2. Considerable addition in carrier concentration resulted in the attainment of figure of merit with peak value of 1.4. Techniques such as nanostructuring and doping have boosted silicides such as HMS to show a remarkable achievement in the attainment of dimensionless figure of merit. Iron disilicide (FeSi2), Chromium silicide (CrSi2) and Cobalt Silicide (CoSi) have shown their worth to be employed as thermoelectric materials in industries in near future. It is also recommended to analyze supplementary types of metal oxides and organic materials which exhibit thermoelectric traits. I.In current scenario, lower utilization of thermoelectric devices is owing to their comparatively high expenditure Sarabjeet Singh et al.

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“…For single-crystal Mg2Si growth, the VB [8] and vertical gradient freeze (VGF) methods [9] are used in a closed-tube system, where a crucible containing the raw materials is encapsulated in a closed ampoule with an Ar pressure of approximately 2-3 atm, to prevent Mg evaporation during crystal growth [1,3,[10][11][12]. Recently, 18-mm diameter Mg2Si single crystals without small-angle grain boundaries were synthesized by the VB method using a closed-tube system and a boron nitride (BN)-coated pyrolytic boron nitride (pBN) crucible [13].…”

Section: Introductionmentioning

confidence: 99%

Growth of 2-inch diameter Mg<sub>2</sub>Si crystal by the VGF method under Ar normal pressure

2023

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A 2-inch diameter Mg2Si crystal was synthesized via the vertical gradient freeze (VGF) method in an open-tube system using pyrolytic boron nitride crucibles coated with boron nitride. Using this open-tube system, Mg evaporation was significantly prevented under Ar gas flow. Many grain boundaries were observed at the crystal cross section. A 5-mm square wafer without grain boundaries was cut out from the crystal and characterized by X-ray rocking curve (XRC) analysis, exhibiting a sharp single peak with a full width at half maximum (FWHM) of 50.4 arcsec. This indicates good crystallinity of the single crystalline area of the synthesized crystal.

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Semiconducting properties of Mg2Si single crystals

Cited by 4 publications

References 0 publications

The Thermoelectric Properties of Mixed Crystals of Mg[sub 2]Ge[sub x]Si[sub 1−x]

The Thermoelectric Properties of Mixed Crystals of Mg[sub 2]Ge[sub x]Si[sub 1−x]

A review on Silicide based materials for thermoelectric applications

Growth of 2-inch diameter Mg<sub>2</sub>Si crystal by the VGF method under Ar normal pressure

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