Semiconducting Properties of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Mg</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Si Single Crystals

Morris, Robert G.; Redin, R. D.; Danielson, G. C.

doi:10.1103/physrev.109.1909

Cited by 266 publications

(118 citation statements)

References 10 publications

Supporting

Mentioning

104

Contrasting

Order By: Relevance

“…Mg 2 Si is a semiconductor with an indirect bandgap of $0.78 eV, and its room temperature mobility is as high as 406 cm 2 /V-sec for n-type and 56 cm 2 /V-sec for p-type material. 30 The exhibited mobilities and bandgap are favorable for thermoelectrics. In 2006, Zaitsev et al 24 reported an optimal ZT of 1.1 at around 800 K for polycrystalline Mg 2 Si 0.4 Sn 0.6 and Mg 2 Si 0.6 Sn 0.4 (Fig.…”

Section: Silicide As a Thermoelectric Materialsmentioning

confidence: 99%

Silicide Nanopowders as Low-Cost and High-Performance Thermoelectric Materials

Chen

2013

JOM

View full text Add to dashboard Cite

Thermoelectric devices directly convert heat into electricity and are very attractive for waste heat recovery and solar energy utilization. If thermoelectric devices can be made sufficiently efficient and inexpensive, then they will become a transformative energy technology that can tap a significant portion (10-20%) of the vast amount of heat existing in nature as well as industrial processes. Nanopowders of Earth-abundant, silicide-based materials, such as Mg 2 Si and its alloys, provide a unique opportunity to realize this goal. This article will present an overview of recent advances in the synthesis and thermoelectric properties of silicide-based nanostructured materials.

show abstract

Section: Silicide As a Thermoelectric Materialsmentioning

confidence: 99%

Silicide Nanopowders as Low-Cost and High-Performance Thermoelectric Materials

Chen

2013

JOM

View full text Add to dashboard Cite

show abstract

“…It is known that Mg2Si monocrystals grown from melt with stoichiometric Mg/Si relation without additional doping are n-type semiconductor [15]. Nonstoichiometry influences the conductivity type of these compounds.…”

Section: Introductionmentioning

confidence: 99%

Mg2Sn heterostructures on Si(111) substrate

Dózsa

Галкин

Pécz

et al. 2017

Applied Surface Science

View full text Add to dashboard Cite

show abstract

“…Mg 2 Si-based thermoelectric (TE) materials were reported in the early 1960s [1,2] as promising devices for heat-into-electricity-conversion in the middle temperature range, because of their attractive figure-of-merit ZT = 1.3 [3][4][5]. Compared with PbTe and CoSb 3 or other TEs usable in the same temperature range, silicides have advantages as they are considered as environmental-friendly materials, because they consist of elements which are abundant in the earth's crust and they are nontoxic.…”

Section: Introductionmentioning

confidence: 99%

“…In addition, since they are composed of light metals, they have low densities in the range of 2-3.6 g/cm 3 which is a particularly favorable feature for heat recovery in automobile applications. Processing is a challenge, as the Mg 2 Si phase melts at 1358 K, which is extremely close to the boiling point of pure Mg (1363 K) [1]. This close difference prevents the easy-to-use arc-melting method which is popular for intermetallic TE processing [6,7].…”

Section: Introductionmentioning

confidence: 99%

“…While pure Mg 2 Si can reach a negative Seebeck coefficient of up to S = −0.5 mV/K but only ZT = 0.1 [1,19], the thermoelectric performance can be significantly improved with proper dopants. The best dopants, with which the best results for n-type Mg 2 Si have been achieved, are 0.3 at% Bi which exhibits S = −0.2 mV/K and ZT =1.4 [5,19], and doping with 3% Ag for p-type Mg 2 Si with S = 0.4 mV/K and ZT = 0.7 [19,20] The values do not change very much when industrial raw material [20] or processing conditions are used [21], 3at% Bi yield to S = −0.2 mV/K and ZT = 0.8 [20], or 0.5 [21] and 3a% Ag to S = +0.2 mV/K and ZT = 0.6 [20], or 0.3 [21].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Thermoelectric Properties of Mg2Si Produced by New Chemical Route and SPS

et al. 2014

View full text Add to dashboard Cite

This paper reports about a new synthesis method for preparing Mg 2 Si in an efficient way. The intermetallic Mg 2 Si-phase forms gradually from a mixture of Mg and Si fine powder during exposure to hydrogen atmosphere, which reacts in a vacuum vessel at 350 °C. The resulting powder has the same particle size (100 µm) compared with commercial Mg 2 Si powder, but higher reactivity due to large surface area from particulate morphology. Both types of powders were compacted by spark plasma sintering (SPS) experiments at 627, 602, 597, and 400 °C for 600 s with a compaction pressure of 80 MPa. The thermoelectric characterization was performed with low and high temperature gradients of ΔT = 10 K up to 600 K. The results confirmed a Seebeck coefficient of −0.14 mV/K for specimens sintered from both powders. The small difference in total performance between purchased and produced power is considered to be due to the effect of impurities. The best values were obtained for n-type Mg 2 Si doped with 3% Bi yielding a Seebeck coefficient of −0.2 mV/K, ZT = 0.45) and electric output power of more than 6 µW. OPEN ACCESSInorganics 2014, 2 352

show abstract

Semiconducting Properties ofMg2Si Single Crystals

Cited by 266 publications

References 10 publications

Silicide Nanopowders as Low-Cost and High-Performance Thermoelectric Materials

Silicide Nanopowders as Low-Cost and High-Performance Thermoelectric Materials

Mg2Sn heterostructures on Si(111) substrate

Thermoelectric Properties of Mg2Si Produced by New Chemical Route and SPS

Contact Info

Product

Resources

About