2015
DOI: 10.1016/j.synthmet.2015.04.017
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Semiconducting π-extended porphyrin dimer and its characteristics in OFET and OPVC

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Cited by 12 publications
(5 citation statements)
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References 35 publications
(11 reference statements)
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“…Using the π-extended strategy, single-crystal OFETs made of four 2-ethynyl-5-hexylthiophene peripheral-arms-substituted porphyrin derivatives (H 2 TP (17c) and ZnTP (18a)) provided mobilities as high as 0.85 and 2.90 cm 2 V −1 s −1 , respectively, which are higher than those of film devices [68]. Similarly, OFETs of the π-extended porphyrin derivatives (2TBPH (19a), 2TBPZ (19b), TEPP (20a), DTEPP (20b), 20c, 20d, PD-1 (21), H2TPEP (22a), and ZnTPEP (22b)) displayed high hole mobilities ranging from 0.026 to 2.57 cm 2 V −1 s −1 [69][70][71][72][73]. For double-thiophenesubstituted porphyrin derivatives (H2DTP (23a), NiDTP (23b), and CuDTP (23c)) [74], their single-crystal OFETs exhibited mobilities of up to 0.15, 1.50, and 0.74 cm 2 V −1 s −1 , respectively.…”
Section: P-type Macrocycle Semiconductorsmentioning
confidence: 94%
“…Using the π-extended strategy, single-crystal OFETs made of four 2-ethynyl-5-hexylthiophene peripheral-arms-substituted porphyrin derivatives (H 2 TP (17c) and ZnTP (18a)) provided mobilities as high as 0.85 and 2.90 cm 2 V −1 s −1 , respectively, which are higher than those of film devices [68]. Similarly, OFETs of the π-extended porphyrin derivatives (2TBPH (19a), 2TBPZ (19b), TEPP (20a), DTEPP (20b), 20c, 20d, PD-1 (21), H2TPEP (22a), and ZnTPEP (22b)) displayed high hole mobilities ranging from 0.026 to 2.57 cm 2 V −1 s −1 [69][70][71][72][73]. For double-thiophenesubstituted porphyrin derivatives (H2DTP (23a), NiDTP (23b), and CuDTP (23c)) [74], their single-crystal OFETs exhibited mobilities of up to 0.15, 1.50, and 0.74 cm 2 V −1 s −1 , respectively.…”
Section: P-type Macrocycle Semiconductorsmentioning
confidence: 94%
“…Despite the utilization of solvent additives to modulate the device performance in photovoltaic and thermoelectric devices, its significance in polymer OFET is less explored. Solvent additives like DIO and chloronaphthalene were previously used as morphology modifiers for achieving enhanced mobility. By introducing solvent additives of varying volatility, the alignment of the polymer chains is modulated, and the charge transport property is also regulated. Less volatile solvent additives are reported to help in controlling the thin film morphology to achieve better charge transport, nevertheless residuals of these solvents hamper the stability of the device. Even DIO is reported to form photoacid in the presence of light, hence, any of its residuals degrades the device performance further .…”
Section: Introductionmentioning
confidence: 99%
“…Park et al reported a pi-extended porphyrin dimer with a field-effect mobility of 1.32 × 10 −2 cm 2 /Vs and an on/off ratio of 10 5 . 15 Chae et al reported tetrakis((4hexylphenyl)ethynyl) porphyrin with 0.029 cm 2 /Vs charge carrier mobility and an on/off ratio of 10 4 . 8 These studies reported pi-extended planar porphyrins as one of the best candidates for the OFET fabrication.…”
Section: ■ Introductionmentioning
confidence: 99%
“…Of the various molecules under investigation for organic electronics, porphyrins and their related macrocycles are of special interest because they are robust and their properties can be modulated by chelation of a metal ion and functionalization on the macrocycle. Park et al reported a pi -extended porphyrin dimer with a field-effect mobility of 1.32 × 10 –2 cm 2 /Vs and an on/off ratio of 10 5 . Chae et al reported tetrakis­((4-hexylphenyl)­ethynyl) porphyrin with 0.029 cm 2 /Vs charge carrier mobility and an on/off ratio of 10 4 .…”
Section: Introductionmentioning
confidence: 99%