1967
DOI: 10.1039/tf9676301295
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Semiconduction in non-stoichiometric rare earth oxides

Abstract: The electrical conductivities of the sesquioxides, dioxides and a few non-stoichiometric oxides of Pr and Tb have been measured at various temperatures and the activation energies for the conduction process have been reported. The conductivity passes through a maximum in the composition range LnO1.70-LnO1.83 (Ln = Pr or Tb). The conductivity data are consistent with the hopping model for these semiconductors. Calculation of the Frohlich's coupling constant and transition probability in Pr6011 has shown that th… Show more

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Cited by 39 publications
(15 citation statements)
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“…is deposited (10-50 layers). Such result is consistent with the literature that the Pr 6 O 11 particles exhibit a superior electrical conductivity due to the electron hopping mechanism between Pr 3+ and Pr 4+ within the semi-conductive oxide structure [16,23]. In addition, the increasing capacitance value (C 2 ) is clearly denoted at higher deposition cycles from 10 to 50 layers, which is mainly attributed to increase in the semiconductive properties of the overlayers on the ITO surface.…”
Section: Resultssupporting
confidence: 92%
“…is deposited (10-50 layers). Such result is consistent with the literature that the Pr 6 O 11 particles exhibit a superior electrical conductivity due to the electron hopping mechanism between Pr 3+ and Pr 4+ within the semi-conductive oxide structure [16,23]. In addition, the increasing capacitance value (C 2 ) is clearly denoted at higher deposition cycles from 10 to 50 layers, which is mainly attributed to increase in the semiconductive properties of the overlayers on the ITO surface.…”
Section: Resultssupporting
confidence: 92%
“…12,13 Pr oxide undergoes a phase transition from the ordered PrO 1.833 at room temperature to disordered PrO 1.83 at increasing temperatures, which is reected in the electrical conductivity behaviour. [14][15][16] It seems that the variation of E a in the R p coincides with this phase transition.…”
mentioning
confidence: 72%
“…Increasing the temperature treatment to 1600 °C, the maximum amounts of M 2 O 3 miscible into CeO 2 lattice significantly decreases for all the trivalent dopants considered . The anion vacancy model has been confirmed for these solid solutions by both density and X-ray intensity analysis. , In some cases, a certain long-range ordering of the anion vacancies, resulting in the formation of C-type rare earth oxide structure, has been observed, with ordering favored for the smaller trivalent metal cations. , The formation of oxygen vacancies within the structure of M 2 O 3 -doped CeO 2 is a key factor to promote oxygen diffusion in the materials, allowing hopping of O 2– anions from one position to the next empty one . Among the ceria-rare earth oxide systems, Sm­(III) and Gd­(III) have been shown to cause the highest increase of electrical conductivity given their ionic radii, which are very close to that of Ce­(IV).…”
Section: Structural Properties Of Ceo2-based Materialsmentioning
confidence: 96%