Semiconductor core-level to valence-band maximum binding-energy differences: Precise determination by x-ray photoelectron spectroscopy

Kraut, E. A.; Grant, R. W.; Waldrop, J. R.; Kowalczyk, S. P.

doi:10.1103/physrevb.28.1965

Cited by 467 publications

(252 citation statements)

References 50 publications

Supporting

Mentioning

242

Contrasting

Unclassified

Order By: Relevance

“…This technique is considered more accurate than simple linear extrapolation of the leading edge of the valence-band region. 28 In this process, the partial electronic DOS (PEDOS) for each material was calculated ab initio using hybrid density functional theory (DFT).…”

Section: Theoretical Methodsmentioning

confidence: 99%

Energy-band alignment of II-VI/Zn3P2 heterojunctions from x-ray photoemission spectroscopy

Bosco

Scanlon

Watson

et al. 2013

Journal of Applied Physics

View full text Add to dashboard Cite

The energy-band alignments for zb-ZnSe(001)/a-Zn 3 P 2 (001), w-CdS(0001)/a-Zn 3 P 2 (001), and w-ZnO(0001)/a-Zn 3 P 2 (001) heterojunctions have been determined using high-resolution x-ray photoelectron spectroscopy via the Kraut method. Ab initio hybrid density functional theory calculations of the valence-band density of states were used to determine the energy differences between the core level and valence-band maximum for each of the bulk materials. The ZnSe/Zn 3 P 2 heterojunction had a small conduction-band offset, DE C , of À0.03 6 0.11 eV, demonstrating a nearly ideal energy-band alignment for use in thin-film photovoltaic devices. The CdS/Zn 3 P 2 heterojunction was also type-II but had a larger conduction-band offset of DE C ¼ À0.76 6 0.10 eV. A type-III alignment was observed for the ZnO/Zn 3 P 2 heterojunction, with DE C ¼ À1.61 6 0.16 eV indicating the formation of a tunnel junction at the oxide-phosphide interface. The data also provide insight into the role of the II-VI/Zn 3 P 2 band alignment in the reported performance of Zn 3 P 2 heterojunction solar cells. V C 2013 AIP Publishing LLC. [http://dx

show abstract

Section: Theoretical Methodsmentioning

confidence: 99%

Energy-band alignment of II-VI/Zn3P2 heterojunctions from x-ray photoemission spectroscopy

Bosco

Scanlon

Watson

et al. 2013

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…, by referencing the VBM of LAO and STO, while separated and in intimate contact, to core orbitals for the various elements [84][85]. The first step was to determine the binding energy differences between core peaks and the VBM for bulk or bulk-like LAO and STO.…”

Section: Implications For Electronic Structurementioning

confidence: 99%

Instability, intermixing and electronic structure at the epitaxial LaAlO3/SrTiO3

Chambers

Engelhard

Shutthanandan

et al. 2010

Surface Science Reports

288

221

View full text Add to dashboard Cite

“…In this case, the core-hole lifetime for the Au 4f 7/2 peak is calculated to be 0.32 eV, in accordance with literature values. 9,10 The spectrometer response functions had Gaussian widths of 0.67 and 0.50 eV for photoemission and inverse photoemission experiments, respectively.…”

Section: A Pes and Ipes Measurementsmentioning

confidence: 99%

Band alignment issues related to HfO2∕SiO2∕p-Si gate stacks

Sayan

Emge

Garfunkel

et al. 2004

Journal of Applied Physics

103

View full text Add to dashboard Cite

The valence and conduction band densities of states for the HfO 2 / SiO 2 / Si structure are determined by soft x-ray photoemission and inverse photoemission. First principles calculations are used to help in assigning valence band maxima and conduction band minima. The energies of defect states at the band edges are estimated by comparing the theoretical and experimental results. Determinations of the local surface potentials before and after a forming gas anneal are used to help determine the possible location of the charge in the film.

show abstract

Semiconductor core-level to valence-band maximum binding-energy differences: Precise determination by x-ray photoelectron spectroscopy

Cited by 467 publications

References 50 publications

Energy-band alignment of II-VI/Zn3P2 heterojunctions from x-ray photoemission spectroscopy

Energy-band alignment of II-VI/Zn3P2 heterojunctions from x-ray photoemission spectroscopy

Instability, intermixing and electronic structure at the epitaxial LaAlO3/SrTiO3

Band alignment issues related to HfO2∕SiO2∕p-Si gate stacks

Contact Info

Product

Resources

About