Semiconductor Dimensional Metrology Using the Scanning Electron Microscope

Utterback, S. G.

doi:10.1007/978-1-4613-0979-6_32

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1994

2005

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Cited by 3 publications

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“…These are physical limitations based upon the properties of light Once some of these limitations became recognized it was thought that the scanning electron microscope would then become the metrology tool of choice for sub-micrometer metrology. Unfortunately, limitations also exist using this technique [ 86 , 137 ]. These limitations are based upon the interaction of the electron beam with the sample.…”

Section: Introductionmentioning

confidence: 99%

Critical issues in scanning electron microscope metrology

Postek¹

1994

J. RES. NATL. INST. STAN.

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During the manufacturing of presentday integrated circuits, certain measurements must be made of the submicrometer structures composing the device with a high degree of repeatability. Optical microscopy, scanning electron microscopy, and the various forms of scanning probe microscopies are major microscopical techniques used for this submicrometer metrology. New techniques applied to scanning electron microscopy have improved some of the limitations of this technique and time will permit even further improvements. This paper reviews the current state of scanning electron microscope (SEM) metrology in light of many of these recent improvements.

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Section: Introductionmentioning

confidence: 99%