2019
DOI: 10.1021/acs.nanolett.9b04187
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Semiconductor–Ferromagnetic Insulator–Superconductor Nanowires: Stray Field and Exchange Field

Abstract: Nanowires can serve as flexible substrates for hybrid epitaxial growth on selected facets, allowing for design of heterostructures with complex material combinations and geometries. In this work we report on hybrid epitaxy of semiconductor -ferromagnetic insulator -superconductor (InAs/EuS/Al) nanowire heterostructures. We study the crystal growth and complex epitaxial matching of wurtzite InAs / rock-salt EuS interfaces as well as rock-salt EuS / face-centered cubic Al interfaces. Because of the magnetic anis… Show more

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Cited by 73 publications
(63 citation statements)
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“…Recently the first attempts toward zero-external-field topological superconductivity have been made [14,15]. A typical setup of a heterostructure consists of semiconducting (SM), superconducting (SC), and magnetic insulator (MI) parts connected together as shown schematically in Fig.…”
Section: Introductionmentioning
confidence: 99%
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“…Recently the first attempts toward zero-external-field topological superconductivity have been made [14,15]. A typical setup of a heterostructure consists of semiconducting (SM), superconducting (SC), and magnetic insulator (MI) parts connected together as shown schematically in Fig.…”
Section: Introductionmentioning
confidence: 99%
“…The authors of Refs. [14,15] further coupled EuS to Al and InAs with the ultimate goal of inducing zero-field topological superconductivity. Epitaxial growth on different wire facets was achieved and the stray magnetic field generated by EuS was found to be insufficient for inducing a topological phase [15].…”
Section: Introductionmentioning
confidence: 99%
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“…However, now the quantum system consists of only the InAs nanowire and the Al layer, which we treat on equal footing at the quantum mechanical level. We model the role of EuS as an induced exchange coupling term in the associated regions in InAs and Al, while neglecting the stray field from the EuS [46]. The effects of gates, surface charges, dielectric layers, and the vacuum are taken into account via the self-consistently calculated electrostatic potential inside the InAs nanowire.…”
Section: A Model Hamiltonianmentioning
confidence: 99%
“…1). The technology for building this setup has already been developed, motivated by the prospects of utilizing MFs as a staple ingredient for topological quantum computers [38][39][40][41][42]. We explore the potential of this setup in a completely different context utilizing the perfect topologically protected Andreev reflection (AR) enabled by the MF [37,43] but not exploiting the existence of a nonlocal quantum degrees of freedom used in topological quantum computers [44].…”
Section: Introductionmentioning
confidence: 99%