Semiconductor-homojunction induction in single-crystal GaN nanostructures under a transverse electric field:Ab initiocalculations

Abstract

Ab initio calculations show that a transverse electric field induces a homojunction across the diameter of initially semiconducting GaN single-crystal nanotubes ͑SCNTs͒ and nanowires ͑NWs͒. The homojunction arises due to the decreased energy of the electronic states in the higher potential region with respect to the energy of those states in the lower potential region under the transverse electric field. Calculations on SCNTs and NWs of different diameters and wall thicknesses show that the threshold electric field required for the semiconductor-homojunction induction increases with increasing wall thickness and decreases significantly with increasing diameter.

Electric‐field‐induced magnetism of first‐row d0 semiconductor nanowires and nanotubes

“…In fact, as shown in Fig. (c), the band gaps of all the calculated ZnO, GaN, and InN NWs/NTs decrease as F increases, which is consistent with previous work . The reduction of band gap under F , also known as the giant Stark effect , is usually attributed to charge redistribution induced by the breakdown of electrostatic potential symmetry.…”

Tunable electronic properties of ZnO nanowires and nanotubes under a transverse electric field

“…Figure 1 shows the top views of the ZnO NWs and faceted NTs studied here, which were optimized without the electric field. For convenience, similar with the previous paper 16 we name the NWs as WH2, WH3, and WH4, as they consist of two, three, and four coaxial hexagonal layers, respectively. Similarly, the faceted NTs are named as TH32, TH42, and TH43, where they comprise two, two, and three hexagonal atomic layers, and their outside dimensions are the same with WH3, WH4 and WH4, respectively.…”

“…For example, Zhang et al have observed experimentally that the longitudinal electronic transport of ZnO nanowires can be tuned by the transverse electric field. 5 On the other hand, it has been extensively proved theoretically that the electric field can efficiently modulate the electronic properties in numerous nanostructures, such as carbon NTs, [6][7][8][9][10][11] BN NTs, [12][13][14] SiC NTs, 15 GaN NWs and NTs, 16 Si NWs, 17 AlN nanoribbons, 18 and ZnO nanoribbons. 19 For instance, Yilmaz et al 16 have observed the transverse electric field can induce a homojunction across the diameter for the GaN NTs and NWs.…”

Silicane nanoribbons: electronic structure and electric field modulation

“…We note that the calculated Si-H bond energy (BE) in H-silicane, Si-Si BE in silicene, and Si-F BE in F-silicane are −3.021 eV, −4.581 eV, electric field makes the energy of the electronic states at the low potential region increase, and the energy of the electronic states at the high potential region decrease, so that the VBM on one side of the ribbon is leveled to the CBM on the opposite side when a threshold electric field is reached (see figures 7(a)-(c)). Moreover, the band gap of the ribbon on the two sides remains unchanged, leading to the possibility of the generation of electrons and holes via tunneling [24] across the ribbon, which could induce novel optical and electric properties. When we increase the electric field to 0.2 V Å −1 , the VBM at the low potential region stays above the Fermi energy, and the CBM at the high potential region below the Fermi energy (see figures 7(d)-(f)), indicating that the electric field renders the NR self-doped; p-type on one side and n-type on the opposite side.…”