Semiconductor Materials

Berger, Lev I.

doi:10.1201/9780138739966

Cited by 20 publications

(16 citation statements)

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“…Materials, space-group (SG), Inorganic Crystal Structure Database (ICSD#) id, Materials-Project (MP#) id, JARVIS-DFT id (JV#), bandgap from MP (MP), bandgap from AFLOW, bandgap from OQMD, our OptB88vdW bandgap (OPT), Tran-Blah modified Becke-Johnson potential bandgap (MBJ), Heyd-Scuseria-Ernzerhof (HSE06) and experimental bandgaps (eV) data are shown. Experimental data were obtained from18,21,46,47 . MAE denotes the mean absolute error, while SC is the Spearman's coefficient.…”

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confidence: 99%

Computational screening of high-performance optoelectronic materials using OptB88vdW and TB-mBJ formalisms

et al. 2018

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We perform high-throughput density functional theory (DFT) calculations for optoelectronic properties (electronic bandgap and frequency dependent dielectric function) using the OptB88vdW functional (OPT) and the Tran-Blaha modified Becke Johnson potential (MBJ). This data is distributed publicly through JARVIS-DFT database. We used this data to evaluate the differences between these two formalisms and quantify their accuracy, comparing to experimental data whenever applicable. At present, we have 17,805 OPT and 7,358 MBJ bandgaps and dielectric functions. MBJ is found to predict better bandgaps and dielectric functions than OPT, so it can be used to improve the well-known bandgap problem of DFT in a relatively inexpensive way. The peak positions in dielectric functions obtained with OPT and MBJ are in comparable agreement with experiments. The data is available on our websites http://www.ctcms.nist.gov/~knc6/JVASP.html and https://jarvis.nist.gov.

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confidence: 99%

Computational screening of high-performance optoelectronic materials using OptB88vdW and TB-mBJ formalisms

et al. 2018

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“…However, there are several disadvantages: (1) the BX3 boron halides are characterized by very low B/BX3 weight ratios [81], (2) the reaction product HX is corrosive [82], and (3) it requires a high substrate temperature (800℃ -1200℃) [83]. Ultrapure boron for use in the semiconductor industry is produced by the decomposition of diborane at high temperatures followed by a further purification by zone melting or Czochralski processes [84].…”

Section: Boron Purification and Preparationmentioning

confidence: 99%

“…Despite the lower saturation current of the PureB diodes the attenuation at high forward voltage due to series resistance is higher than for the SEG diodes. This is because the resistivity of the B layer is very high (> 500 Ω-cm [84]), so for a low series resistance a less than 3-nm-thick tunneling layer should be used. This is made clear in Fig.…”

Section: -Diode Measurement Techniquesmentioning

confidence: 99%

Low temperature pure boron layer deposition for Si diode and micromachining applications

Liu¹

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“…To create vacancy-based emitters, we ion-implanted the sample using a He ion microscope (Zeiss ORION NanoFab) at a He ion fluence of around 10 15 ions/cm 2 with an accelerating voltage of 32 keV, followed by annealing in an argon environment at ambient pressure (see Methods), which prevents AlN surface oxidation that occurs in ambient air at temperatures above 700°C 29 .…”

Section: Materials Processing and Quantum Emitter Creation In Alnmentioning

confidence: 99%

Bright High-Purity Quantum Emitters in Aluminum Nitride Integrated Photonics

Lienhard

Jeong

et al. 2020

ACS Photonics

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Solid-state quantum emitters (QEs) are fundamental in photonic-based quantum information processing. There is strong interest to develop high-quality QEs in III-nitride semiconductors because of their sophisticated manufacturing driven by large and growing applications in optoelectronics, high voltage power transistors, and microwave amplifiers. Here, we report the generation and direct integration of QEs in an aluminium nitride-based photonic integrated circuit platform. For individual waveguide-integrated QEs, we measure an off-chip count rate exceeding 6 × 10 4 counts per second (cps) (saturation rate > 8.6 × 10 4 cps). In an unpatterned thin-film sample, we measure antibunching with g (2) (0) ~ 0.05 and photon count rates exceeding 8 × 10 5 cps (saturation rate > 1 × 10 6 cps). Although spin and detailed optical linewidth measurements are left for future work, these results already show the potential for high-quality QEs monolithically integrated in a wide range of III-nitride device technologies that would enable new quantum device opportunities and industrial scalability.

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Semiconductor Materials

Cited by 20 publications

References 0 publications

Computational screening of high-performance optoelectronic materials using OptB88vdW and TB-mBJ formalisms

Computational screening of high-performance optoelectronic materials using OptB88vdW and TB-mBJ formalisms

Low temperature pure boron layer deposition for Si diode and micromachining applications

Bright High-Purity Quantum Emitters in Aluminum Nitride Integrated Photonics

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