Semiconductor materials for ultrafast optoelectronic applications

Krotkus, A.; Bertulis, K.; Adomavičius, R.; Pačebutas, V.; Geižutis, Andrejus

doi:10.3952/lithjphys.49407

Cited by 5 publications

(4 citation statements)

References 60 publications

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“…Although detecting THz pulses with photoconductive antennas provide several advantages over conventional power detectors such as preserved phase information and relatively high signal-to-noise ratios [ 14 ], these detectors are not suited to trace radiation power. Moreover, even the ultrashort (below 1 ps) carrier trapping time of the epitaxial layers [ 15 ] distort the original THz pulse reducing system bandwidth overall [ 16 ].…”

Section: Introductionmentioning

confidence: 99%

Silicon Field Effect Transistor as the Nonlinear Detector for Terahertz Autocorellators

Ikamas

Nevinskas

Krotkus

et al. 2018

Sensors

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We demonstrate that the rectifying field effect transistor, biased to the subthreshold regime, in a large signal regime exhibits a super-linear response to the incident terahertz (THz) power. This phenomenon can be exploited in a variety of experiments which exploit a nonlinear response, such as nonlinear autocorrelation measurements, for direct assessment of intrinsic response time using a pump-probe configuration or for indirect calibration of the oscillating voltage amplitude, which is delivered to the device. For these purposes, we employ a broadband bow-tie antenna coupled Si CMOS field-effect-transistor-based THz detector (TeraFET) in a nonlinear autocorrelation experiment performed with picoseconds-scale pulsed THz radiation. We have found that, in a wide range of gate bias (above the threshold voltage Vth=445 mV), the detected signal follows linearly to the emitted THz power. For gate bias below the threshold voltage (at 350 mV and below), the detected signal increases in a super-linear manner. A combination of these response regimes allows for performing nonlinear autocorrelation measurements with a single device and avoiding cryogenic cooling.

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Section: Introductionmentioning

confidence: 99%

Silicon Field Effect Transistor as the Nonlinear Detector for Terahertz Autocorellators

Ikamas

Nevinskas

Krotkus

et al. 2018

Sensors

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“…The lift-off procedure was carried out in acetone. Afterwards, the wafer of antennas was implanted with high energy ions to reduce the photoconductivity decay time to the order of subpicoseconds [15] ensuring complete free carrier trapping before the next optical pulse arrival as well as detectivity cut-off at higher frequencies [16]. Finally, the ultrafast photoconductive switches were divided into individual chips and one by one placed on top of a hyperhemispherical high-resistivity silicon lens in a Teravil Ltd. mount for characterization [17].…”

Section: Fabrication and Experimental Detailsmentioning

confidence: 99%

Terahertz photoconductive switch performance dependence on antenna shape

Nevinskas,

Kamarauskas,

Geižutis

et al. 2024

Preprint

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Terahertz photoconductive switch antennas come in many designs that appear to be hardly ever sensibly selected. The femtosecond laser induced carriers generate a continuum at terahertz frequencies that require a low Q factor antenna design achievable through ohmic losses. On the one hand, if a broadband terahertz spectrum is desired, a simple coplanar stripline configuration with narrow arm width, i.e. a short dipole, is sufficient. On the other hand, the practical antenna resonance effect raises fabrication and engineering challenges, while the studied antenna shapes provide only a slight improvement to the emission efficiency. These findings are supported by the terahertz emission and detection characterization of a dozen antenna designs, and the results are discussed through the classical Drude-Lorentz conductivity framework.

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“…Especially in LTG GaAs, where the concentration of this defect is particularly high, it clearly activates the SRH recombination mechanism, leading to efficient shortening of the photo-excited carrier lifetime [31,32]. The effect is so pronounced that LTG GaAs is the most important material for applications in ultrafast optoelectronics [33][34][35]. Figure 2 presents characteristic EPR and optical absorption spectra of the arsenic antisite defect in bulk GaAs and LTG GaAs grown by the MBE method at 200°C [10].…”

Section: Fast Carrier Recombination In Semiconductors With High Impurmentioning

confidence: 99%

“…It also presents devices in which semi-insulating layers are part of their construction necessary for insulation, and ultrafast devices whose performance relies on an ultrashort lifetime of excess carriers. More recent reviews of semiconductor materials for ultrafast optoelectronic devices are a subject of other publications [28,35].…”

Section: Fast Carrier Recombination In Semiconductors With High Impurmentioning

confidence: 99%

Radiative recombination and other processes related to excess charge carriers, decisive for efficient performance of electronic devices

Wincukiewicz¹,

Mech²,

Grankowska³

et al. 2018

physics

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We present selected semiconductor (inorganic and organic) structures for which non-radiative recombination of excess charge carriers is very high, luminescence suppressed and its lifetime substantially shortened. Processes competitive with radiative energy emission are discussed. The importance of Shockley-Read-Hall recombination in materials with high impurity or defect concentration, applied in ultrafast devices, is shown. Also, charge transfer process in solar cells is discussed in the context of luminescence quenching of individual components of an active layer.A part of the shown research was a subject of our common work with Prof. Arūnas Krotkus during the period from 1994 till 2006.

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Semiconductor materials for ultrafast optoelectronic applications

Cited by 5 publications

References 60 publications

Silicon Field Effect Transistor as the Nonlinear Detector for Terahertz Autocorellators

Silicon Field Effect Transistor as the Nonlinear Detector for Terahertz Autocorellators

Terahertz photoconductive switch performance dependence on antenna shape

Radiative recombination and other processes related to excess charge carriers, decisive for efficient performance of electronic devices

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