Semiconductor materials in analytical applications of surface‐enhanced Raman scattering

Abstract

Surface‐enhanced Raman scattering (SERS) is increasingly becoming an important analytical technique in various fields, which can mostly be attributed to the significant evolution of SERS‐active substrates. The semiconductor‐based SERS technique is particularly interesting because the inherent physicochemical properties of semiconductor materials offer several possibilities for the development and improvement of SERS‐based analytical techniques. According to the effect of the semiconductor materials in SERS, semiconductor‐based SERS techniques can be categorized into two areas: (1) semiconductor‐enhanced Raman scattering, in which a semiconductor material is directly used as a substrate for enhancing Raman signals of adsorbed molecules, and (2) semiconductor‐mediated‐enhanced Raman scattering, in which a semiconductor is employed as an ‘antenna’ or ‘trap’ to modulate the Raman enhancement originating from a metal substrate. While the theory on semiconductor‐based SERS is still incomplete and evolving, semiconductor‐based SERS techniques have already resulted in substantial progress in biological analysis, photocatalysis, solar cells, sensing, and optoelectronic devices. The aim of this review is to outline the recent progress in this emerging research field, with a special emphasis on its analytical performance and application areas. Copyright © 2015 John Wiley & Sons, Ltd.

All‐dielectric core/shell resonators: From plasmon‐free SERS to multimodal analysis

“…All‐dielectric and metal‐dielectric materials are attracting an ever‐increasing interest as active substrates for enhancing Raman scattering . In addition to attenuated total reflection Raman spectroscopy and enhanced Raman scattering based on interference effects, new exciting opportunities can be envisioned by taking full advantage of morphology dependence resonances and light‐trapping effects .…”

Recent advances in linear and non‐linear Raman spectroscopy. Part XI

“…Ji, Zhao, and Ozaki reviewed the use of SERS in the analysis of semiconductor materials. The aim of their review is to outline the recent progress in this emerging research field, with a special emphasis on its analytical performance and application areas . Kaemmer and co‐workers describe a method of high‐throughput screening of measuring conditions for an optimized SERS detection.…”

“…For the International Year of Light issue, the following reviews were published: Bersani and Lottici on Raman spectroscopy of minerals and mineral pigments in archaeometry; Buzzini and Suzuki on Forensic applications of Raman spectroscopy; Centeno on Identification of artistic materials in paintings and drawings by Raman spectroscopy; Fisk and co‐workers on Achieving optimal SERS through enhanced experimental design; Doty and co‐workers on What can Raman spectroscopy do for criminalistics? ; Gares and co‐workers on Review of explosive detection methodologies and the emergence of standoff deep UV resonance Raman; Ji, Zhao, and Ozaki on Semiconductor materials in analytical applications of surface‐enhanced Raman scattering; Kano and co‐workers on Hyperspectral coherent Raman imaging—Principle, theory, instrumentation, and applications to life sciences; Penido and co‐workers on Raman spectroscopy in forensic analysis: Identification of cocaine and other illegal drugs of abuse; Pozzi and Leona on Surface‐enhanced Raman spectroscopy in art and archaeology; Stoeckel and co‐workers on The application of Raman spectroscopy for the detection and identification of microorganisms; Yamamoto and Itoh on Why and how do the shapes of surface‐enhanced Raman scattering spectra change? Other reviews that appeared during 2016 were Cui and co‐workers on Plasmon‐driven catalysis in aqueous solutions probed by SERS spectroscopy and Chen and co‐workers on Probing single molecules and molecular aggregates.…”

Effect of TiO2 on Altering Direction of Interfacial Charge Transfer in a TiO2‐Ag‐MPY‐FePc System by SERS

“…[20] SERS spectroscopy possesses distinct advantages on studies of interfacial CT processes,s ince CT is one of the main reasons for the tremendous enhancement of SERS signal. [21,23,26,27] Despite plenty of basic researches have been conducted on CT processes by SERS with semiconductors as models,t here are few studies on the interfacial CT in asolar cell-like system. [22] In this case,n oo bvious change from the CT enhancement in the SERS spectrum can be observed even though the structure or the morphology of the metal NPs is changed.…”